Abstract
It is widely believed that significant improvements in the performance of thermoelectric materials are possible.1,2The development of such improved materials could lead to revolutionary advances in many important technologies, such as refrigeration, electric power generation, and cooling of both superconducting and conventional electronic components.2,3Because device efficiency depends critically on the product of the thermoelectric figure of merit, Z, and the temperature, T, the key issue is the identification of materials that exhibit enhanced values of ZT. Though there are currently many niche applications for thermoelectrics, no bulk materials are yet known that exhibit values of ZT (~4) necessary for thermoelectric refrigeration to be competitive with small refrigerant-based systems and thus to see widespread technological application. However, even more modest increases in ZT above the current best values (ZT~1) should lead to many more applications.1-3
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References
G. D. Mahan, and J. O. Sofo,1234,Proc. Natl Acad. Sci. 93, 7436–7439 (1996).
CRC handbook of thermoelectrics(ed. D. M. Rowe) (CRC Press, Boca Raton, F1, 1995).
F. J. DiSalvo,Science 285, 703–706 (1999).
T. C. Harmon, and J. M. Honig,Thermoelectric and thermomagnetic effects and appli tions(McGraw Hill, New York, 1967).
N. W. Ashcroft, and N. D. Mermin,Solid State Physics(Holt, Rinehart, and Winston, 1976).
B. C. Sales, D. Mandrus, and R. K. Williams,Science 272, 1325 (1996).
D. A. Polvani, J. F. Meng, N. V. C. Shekar, J. Sharp, and J. V. Badding,Chem. Mat.13,2068–2071(2001).
R. D. Barnard, Thermoelectricity in metals and alloys(Taylor & Francis, London 1972).
J. V. Badding, J. F. Meng, and D. A. Polvani,Chem. Mat.10,2889–2894(1998).
J. F. Meng, et al.,Chem. Mat. 12, 197–201 (2000).
J. F. Meng, N. V. C. Shekar, J. V. Badding, D. Y. Chung, and M. G. J. Kanatzidis, Appl. Phys.90,2836–2839(2001).
J. F. Meng, N. V. C. Shekar, J. V. Badding, and G. S. Nolas,J. Appl. Phys 89, 1730–1733(2001).
W. Paul, J. H. Burnett, and H. M. Cheong, in High-Pressure Science and Technology 1993 (eds. S. C. Schmidt, J. W. Shaner, G. Samara, and M. Ross) 545–548 (American Institute of Physics, New York, 1994).
M. Tomozawa, 26,43–74 (1996).
J. V. Badding, unpublished observation.
J. P. Locquet, et al. Nature 394, 453–456 (1998).
U. Ghoshal, et al. Appl. Phys.Lett. 80, 3006–3008 (2002).
D. A. Polvani, J. F. Meng, M. Hasegawa, and J. V. Badding,Rev. Sci. Instrum. 70, 3586–3589(1999).
C. D. W. Jones, K. A. Regan, and F. J. DiSalvo, Phys. Rev. B 58, 16057–16063 (1998).
D. Gerlich, and P. Andersson, J Phys. C:Solid State Phys. 15, 5211–5222 (1982).
A. A. Averkin, Z. Z. Zhaparov, and L. S. Stilbans,Sov.Phys. Semicond. 51954–1956 (1972).
D. Y. Chung, et al.,J. Am. Chem. Soc. 119, 2504–2515 (1997).
Y. M. Blanter, M. I. Kaganov, A. V. Pantsulaya, and A. A. Varlamov,Phys. Rep. 245, 159–257 (1994).
I. M. Lifshitz, Sov. Phys.JETP 11, 1130–1135 (1960).
B. K. Godwal, et al. Phys. Rev. B 65, art. no.-140101 (2002).
A. A. Varlamov and A. V. Pantsulaya,Sov.Phys.JETP 62, 1263–1267 (1985).
A. A. Varlamov, V. S. Egorov, and A. V. Pantsulaya, Advan. Phys. 38, 469–564 (1989).
S. J. Youn and A. J. Freeman,Phys. Rev. B 63, 085112 (2001).
V. V. Sologub, et al. Sov. Phys. JETP 52, 1203–1206 (1980).
V. V. Sologub, R. V. Parfen’ev, and A. D. Goletskaya, JETP Lett. 21, 337–338 (1975).
P. Larson, S. D. Mahanti, and M. G. Kanatzidis, Phys. Rev. B 61, 8162 (2000).
E. S. Itskevich, L. M. Kashirskay, and V. F. Kraidenov, Semiconductors 31, 276–278 (1996).
B. K. Godwal, et al. Phys. Rev. B 57, 773–776 (1998).
I. A. Abrikosov, Y. K. Vekilov, P. A. Korzhavyi, A. V. Ruban, and L. E. Shilkrot, Fiz. Tverd. Tela 34, 2922–2926 (1992).
E. Bruno, B. Ginatempo, E. S. Giuliano, A. V. Ruban, and Y. K. Vekilov, Phys. Rep.- Rev. Sec. Phys. Lett. 249, 353–419 (1994).
O. I. Velikokhatnyi, II Naumov, and E. V. Puchkarev, Phys. Solid State39, 872–876 (1997).
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Scheidemantel, T.J., Badding, J.V. (2003). Pressure Tuning of Thermoelectric Materials. In: Kanatzidis, M.G., Mahanti, S.D., Hogan, T.P. (eds) Chemistry, Physics, and Materials Science of Thermoelectric Materials. Fundamental Materials Research. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-9278-9_12
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