Integration Issues and Challenges

  • Pushkar Jain
  • Eugene J. Rymaszewski


Although the thin-film embedded capacitors have been realized in the prototype quantities, there are several challenging issues for their product applications. Specifically, a successful integration of these capacitors at onchip and/or off-chip levels requires their compatibility, reliability, and interaction (diffusion and/or reaction) with the metal interconnections and their insulators. This chapter discusses many of the key issues and challenges for the integration of thin film capacitors.


None None Leakage Current Density Mobile Charge Package Electronics Integration Issue 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    S. P. Murarka, “Metallization Theory and Practice for VLSI and ULSI,” Butterworth-Heinemann, 1993, ch. 12, pp. 196–210.Google Scholar
  2. [2]
    S. P. Murarka, Mater. Sci. & Engg. R19, 87 (1997).CrossRefGoogle Scholar
  3. [3]
    S. P. Murarka and S. W. Hymes, Crit. Rev. in Solid State Mater. Sci. 20, 87 (1995).CrossRefGoogle Scholar
  4. [4]
    J. D. McBrayer, R. M. Swanson, and T. W. Sigmon, J. Electrochem. Soc. 133, 1241 (1986).CrossRefGoogle Scholar
  5. [5]
    Y. Shacham-Diamond, A. Dedhia, D. Hoffstetter, and W. G. Oldham, J. Electrochem. Soc. 140, 2427 (1993).CrossRefGoogle Scholar
  6. [6]
    J. Pallean, J. C. Oberlin, F. Braud, J. Torres, J. L. Mermet, M. Mouche, A. Ermolief, and J. Piaget, Proc. Mater. Res. Symp. 337, 225 (1994).CrossRefGoogle Scholar
  7. [7]
    G. Ragha van, C. Chiang, P. B. Anders, S. M. Tzeng, R. Villasol, G. Bai, M. Bohr, and D. Fraser, Thin Soild Films 262, 168 (1995).CrossRefGoogle Scholar
  8. [8]
    A. L. S. Loke, C. Ryu, C. P. Yue, J. S. H. Cho, and S. S. Wong, IEEE Electron Dev. Lett. 17, 549 (1996).Google Scholar
  9. [9]
    A. Mallikarjunan, Ph.D. thesis, Rensselaer Polytech. Inst., Troy, NY, 1998.Google Scholar
  10. [10]
    A. L. S. Loke, J. Wetzel, P. Townsend, T. Tanabe, R. Vrtis, M. Zussman, D. Kumar, C. Ryu, and S. Wong, IEEE Trans. Electron Dev. 46, 2178 (1999).CrossRefGoogle Scholar
  11. [11]
    Z.-C. Wu, C. C. Wang, R. G. Wu, J. Electrochem. Soc. 146, 4290 (1999).CrossRefGoogle Scholar
  12. [12]
    T. Laurila, K. Zeng, A. Seppala, J. Molarius; I. Suni; and J. K. Kivilahti, Proc. Mater. Res. Soc. Symposium 2001, vol. 612, pp. D7.4.Google Scholar
  13. [13]
    Y. K. Lee, L. K. Maung; K. JaeHyung, T. Osipowicz; and K. Lee, Mater. Sci. & Engg. B 68(2), 99 (1999).CrossRefGoogle Scholar
  14. [14]
    R. F. Pierret, “Semiconductor Device Fundamentals,” Addison Wesley Longman 1996, ch. 16, pp. 563–600.Google Scholar
  15. [15]
    T. Suwwan de Felipe, S. P. Murarka, S. Bedell, and W. A. Landford, Thin Solid Films 335, 49 (1998).CrossRefGoogle Scholar
  16. [16]
    Y. Shacham-Diamond, A. Dedhia, D. Hoffstetter, and W. G. Oldham, J. Electrochem. Soc. 140, 2427 (1993).CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2004

Authors and Affiliations

  • Pushkar Jain
    • 1
  • Eugene J. Rymaszewski
    • 1
  1. 1.Rensselaer Polytechnic InstituteTroyUSA

Personalised recommendations