Abstract
A novel gas sensor device is presented. Its configuration resembles a “normally on” n-type thin film transistor (TFT) with a gas sensitive metal oxide as its channel. Without a gate voltage, the device works as a conventional metal oxide gas sensor. Applied gate voltages affect the channel carrier concentration and surface potential of the metal oxide, thus causing a change in sensitivity. With a gate-voltage-pulse operation a novel measurement technique is introduced.
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Wöllenstein, J., Jägle, M., Böttner, H. (2003). A Gas Sensitive Tin Oxide Thin-Film Transistor. In: Doll, T. (eds) Advanced Gas Sensing. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-8612-2_4
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DOI: https://doi.org/10.1007/978-1-4419-8612-2_4
Publisher Name: Springer, Boston, MA
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