Abstract
This paper reviews minimal repair models where information is available about the condition of the system analyzed. In the traditional minimal repair model, the age of the system is not changed by the repair. When additional information is available, the concept of a minimal repair has to be generalized, and in this paper, we look closer at some of the suggestions that have been put forward. A point process framework can be used to describe the generalized minimal repair concepts. Several examples demonstrate the applications of the models for optimal replacement problems.
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References
Ziegler, A., Idrobo, J.C., Cinibulk, M.K., Kisielowski, C., Browning, N.D., Ritchie, R.O.: Atomic-resolution observations of semicrystalline intergranular thin films in silicon nitride. Appl. Phys. Lett. 88(4), 041919 (2006)
Ziegler, A., Idrobo, J.C., Cinibulk, M.K., Kisielowski, C., Browning, N.D., Ritchie, R.O.: Interface structure and atomic bonding characteristics in silicon nitride ceramics. Science 306, 1768 (2004)
Winkelman, G.B., Dwyer, C., Hudson, T.S., Nguyen-Manh, D., Döblinger, M., Satet, R.L., Hoffmann, M.J., Cockayne, J.H.: Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride. Philos. Mag. Lett. 84, 755–762 (2004)
Shibata, N., Painter, G.S., Satet, R.L., Hoffmann, M.J., Pennycook, S.J., Becher, P.F.: Rare-earth adsorption at intergranular interfaces in silicon nitride ceramics: subnanometer observations and theory. Phys. Rev. B 72(14), 140101 (2005)
Walkosz, W., Idrobo, J.C., Klie, R.F., Öğüt, S.: Reconstructions and nonstoichiometry of oxygenated \(\beta\) -\(\hbox{Si}_3\hbox{N}_4\,[10\overline{1}0]\) surfaces. Phys. Rev. B 78(16), 165322 (2008)
Wu, L., Wiesmann, H.J., Moodenbaugh, A.R., Klie, R.F., Zhu, Y., Welch, D.O., Suenaga, M.: Oxidation state and lattice expansion of CeO2—x nanoparticles as a function of particle size. Phys. Rev. B 69, 125415 (2004)
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Walkosz, W. (2011). Atomic-Resolution Study of the Interfacial Bonding at Si3N4/CeO2−δ Grain Boundaries. In: Atomic Scale Characterization and First-Principles Studies of Si₃N₄ Interfaces. Springer Theses. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-7817-2_5
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DOI: https://doi.org/10.1007/978-1-4419-7817-2_5
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