Abstract
The widespread interest in silicon nitride ceramics stems from their desirable physical and mechanical properties in many high temperature and pressure applications [1–5]. Good resistance to oxidation and corrosive environments, low coefficient of friction and thermal expansion, negligible creep, and high decomposition temperature are some of these important properties. Because of these, silicon nitride (especially its polymorph) is widely used in gas turbines, engine parts, bearings, dental drills and gauges, and cutting tools. In addition, thin films and coatings have been studied in relation to high-speed memory devices [6–10] and optical waveguide applications [11].
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References
Chen, I.W., Becher, P.F., Mitomo, M., Petzow, G., Yen, T.S.: Silicon nitride ceramics scientific and technological advances. Mater. Res. Soc. (MRS Proc.) 287, 147–158 (1993)
Hoffmann, M.J.: Analysis of microstructural development and mechanical properties of \(\hbox{Si}_3\hbox{N}_4\) ceramics. In: Hoffmann, M.J., Petzow G. (eds.) Tailoring of Mechanical Properties of \(\hbox{Si}_3\hbox{N}_4\) Ceramics, pp. 59–72. Kluwer Academic Publishers, Dordrecht (1994)
Cahn, R.W., Hassen, P., Kramer, J.: Materials Science and Technology, Structure and Properties of Ceramics. Wiley, Weinheim (1994)
Richerson, D.W.: The Magic of Ceramics. The American Ceramics Society, Westerville (2000)
Riley, F.L.: Silicon nitride and related materials. J. Am. Ceram. Soc. 83(2), 245–265 (2000)
Liu, L., Xu, J.P., Chen, L.L., Lai, P.: A study on the improved programming characteristics of flash memory with \(\hbox{Si}_3\hbox{N}_4/\hbox{SiO}_2\) stacked tunneling dielectric. Microelectron. Reliab. 49, 912–915 (2009)
Saraf, M., Akhvlediani, R., Edrei, R., Shima, R., Roizin, Y., Hoffman, A.: Low thermal budget \(\hbox{SiO}_2/\hbox{Si}_3\hbox{N}_4/\hbox{SiO}_2\) stacks for advanced SONOS memories. J. Appl. Phys. 102, 054512 (2007)
Berberich, S., Godignon, P., Morvan, E., Fonseca, L., Millan, J., Hartnagel, H.L.: Electrical characterisation of \(\hbox{Si}_3\hbox{N}_4/\hbox{SiO}_2\) double layers on p-type 6H-SiC. Microelectron. Reliab. 40, 833–836 (2000)
Wang, Y.Q., Hwang, W.S., Zhang, G., Yeo, Y.C.: Electrical characteristics of memory devices with a high-\(k\) \(\hbox{HfO}_{2}\) trapping layer and dual \(\hbox{SiO}_2/\hbox{Si}_3\hbox{N}_4\) tunneling layer. IEEE Trans. Electron Devices 54(10), 2699–2705 (2007)
Santussi, S., Lozzi, L., Passacantando, M., Phani, A.R., Palumbo, E., Bracchitta, G., De Tommasis, R., Alfonsetti, R., Moccia, G.: Properties of stacked dielectric films composed of \(\hbox{SiO}_2/\hbox{Si}_3\hbox{N}_4/\hbox{SiO}_2\) tunneling layer. J. Non-Cryst. Solids 245, 224–231 (1999)
Kazmierczak, A., Dortu, F., Schrevens, O., Giannone, D., Vivien, L., Marris-Morini, D., Bouville, D., Cassan, E., Gylfason, K.B., Sohlstrom, H., Sanchez, B., Griol, A., Hill, D.: Light coupling and distribution for \(\hbox{Si}_3\hbox{N}_4/\hbox{SiO}_2\) integrated mutichannel single-mode sensing system. Opt. Eng. 48(1), 014401 (2009)
Kijima, K., Shirasaki, S.I.: Nitrogen self-diffusion in silicon nitride. J. Chem. Phys. 65(7), 2668–2671 (1976)
Lange, F.: The sophistication of ceramic science through silicon nitride studies. J. Ceram. Soc. Jpn. 114(11), 873–879 (2006)
Dutta, S., Buzek, B.: Microstructure, strength, and oxidation of a 10 wt% zyttrite-\(\hbox{Si}_3\hbox{N}_4\) ceramic. J. Am. Ceram. Soc. 67(2), 89–92 (1984)
Pezzotti, G.: \(\hbox{Si}_3\hbox{N}_4\)/SiC-platelet composite without sintering aids: a candidate for gas turbine engines. J. Am. Ceram. Soc. 76, 1313–1320 (1993)
Li, H., Komeya, K., Tatami, J., Meguro, T., Chiba, Y., Komatsu, M.: Effect of \(\hbox{HfO}_2\) addition on sintering of \(\hbox{Si}_3\hbox{N}_4\). J. Am. Ceram. Soc. Jpn. 109, 342–346 (2001)
Campbell, G.H., Rühle, M., Dalgleish, B.J., Evans, A.G.: Whisker toughening: a comparison between aluminum oxide and silicon nitride toughened with silicon carbide. J. Am. Ceram. Soc. Jpn. 73, 521–530 (1990)
Becher, P.F., Ferber, M.K.: Temperature-dependent viscosity of SiREAl-based classes as a function of N:O and RE:Al ratios (RE = La, Gd, Y, and Lu). J. Am. Ceram. Soc. 87, 1274–1279 (2004)
Park, H., Kim, H.E., Niihara, K.: Microstructural evolution and mechanical properties of \(\hbox{Si}_3\hbox{N}_4\) with \(\hbox{Yb}_2\hbox{O}_3\) as a sintering additive. J. Am. Ceram. Soc. 80, 750–756 (1995)
Hong, Z.L., Yoshida, H., Ikahara, Y., Sakuma, T., Mishimura, T., Mitomo, M.: The effect of additives on sintering behavior and strength retention in silicon nitride with RE-disilicate. J. Eur. Ceram. Soc. 22, 527–534 (1997)
Guo, S.Q., Hirosaki, N., Yamamoto, Y., Nishimura, T., Mitomo, M.: Strength retention in hot-pressed \(\hbox{Si}_3\hbox{N}_4\) ceramics with \(\hbox{Lu}_2\hbox{O}_3\) additives after oxidation exposure in air at 1500 degrees C. J. Am. Ceram. Soc. 85, 1607–1609 (2002)
Guo, S.Q., Hirosaki, N., Yamamoto, Y., Nishimura, T., Mitomo, M.: Hot-pressed silicon nitride ceramics with \(\hbox{Lu}_2\hbox{O}_3\) additives: elastic moduli and fracture toughness. J. Eur. Ceram. Soc. 23, 537–545 (2003)
Satet, R.L., Hoffmann, M.J.: Influence of the rare-earth element on the mechanical properties of RE-Mg-bearing silicon nitride. J. Am. Ceram. Soc. 88(9), 2485–2490 (2005)
German, R.M.: Liquid Phase Sintering. Plenum Press, New York (1985)
Clarke, D.R.: On the equilibrium thickness of intergranular glass phases in ceramic materials. J. Am. Ceram. Soc. 70(1), 15–22 (1987)
Kleebe, H.J., Hoffmann, M.J., Rühle, M.: Influence of secondary phase chemistry on grain boundary film thickness in silicon nitride. Zeitschrift fur Metallkunde 83(8), 610–617 (1992)
Kleebe, H.J., Cinibulk, M.K., Cannon, R.M., Rühle, M.: Statistical analysis of the intergranular film thickness in silicon nitride ceramics. J. Am. Ceram. Soc. 76, 1969 (1993)
Clarke, D.R., Shaw, T.M., Philipse, A.P., Horn, R.G.: Possible electrical double-layer contribution to the equilibrium thickeness of intergranular glass films in polycrystalline ceramics. J. Am. Ceram. Soc. 76, 1201 (1993)
Tanaka, I., Kleebe, H.J., Cinibulk, M.K., Bruley, J., Clarke, D.R., Rühle, M.: Calcium concentration dependence of the intergranular film thickness in silicon nitride. J. Am. Ceram. Soc. 77, 911 (1994)
Wang, C., Pan, X., Hoffmann, M.J., Rühle, M.: Grain boundary films in rare-earth-glass-based silicon nitride. J. Am. Ceram. Soc. 79, 788 (1996)
Subramaniam, A., Koch, C.T., Cannon, R.M., Rühle, M.: Intergranular glassy films: an overview. Mater. Sci. Eng. A 422(1–2), 3–18 (2006)
Sanders, W.A., Miekowski, D.M.: Strength and microstructure of sintered \(\hbox{Si}_3\hbox{N}_4\) with rare-earth-oxide additions. J. Am. Ceram. Soc. 64, 304–309 (1985)
Sun, E.Y., Becher, P.F., Plucknett, K.P., Hsueh, C.H., Alexander, K.B., Waters, S.B., Hirao, K., Brito, M.E.: Microstructural design of silicon nitride with improved fracture toughness: II, effects of yttria and alumina additives. J. Am. Ceram. Soc. 81, 2831–2840 (1998)
Satet, R.L., Hoffmann, M.J.: Grain growth anisotropy of \(\beta\)-silicon nitride in rare-earth doped -oxynitride glasses. J. Eur. Ceram. Soc. 24, 3437–3445 (2004)
Choi, D.J., Scott, W.D.: Devitrification and delayed crazing of SiO\(_2\) on single-crystal silicon and chemically vapor-deposited silicon nitride. J. Am. Ceram. Soc. 70, 269–272 (1987)
Part, J.Y., Kim, J.R., Kim, C.H.: Effects of free silicon on the \(\alpha\) to \(\beta\) phase transformation in silicon nitride. J. Am. Ceram. Soc. 70, 240–242 (1987)
Burns, G.T., Chandra, G.: Pyrolysis of preceramic polymers in ammonia: preparation of silicon nitride powders. J. Am. Ceram. Soc. 72, 333–337 (1989)
Choi, D.J., Fishbach, D.B., Scott, W.D.: Oxidation of chemically-vapor-deposited silicon nitride and single-crystal silicon. J. Am. Ceram. Soc. 72, 1118–1123 (1989)
Kleebe, H.J., Ziegler, G.: Influence of crystalline secondary phases on the densification behavior of reaction-bonded silicon nitride during postsintering under increased nitrogen pressures. J. Eur. Ceram. Soc. 72, 2314–2317 (1989)
Tanaka, I., Pezzotti, G., Okamoto, T., Miyamoto, Y., Koizumim, M.: Hot isostatic press sintering and properties of silicon nitride without additives. J. Am. Ceram. Soc. 72, 1656–1660 (1989)
Mitomo, M., Tsutsumi, M., Tanaka, H., Uenosono, S., Saito, F.: Grain growth during gas-pressure sintering of \(\beta\)-silicon nitride. J. Eur. Ceram. Soc. 73, 2441–2445 (1990)
Mitomo, M., Uenosono, S.: Microstructural development during gas-pressure sintering of \(\alpha\)-silicon nitride. J. Eur. Ceram. Soc. 75, 103–108 (1992)
Watari, K., Hirao, K., Toriyama, M., Ishizaki, K.: Effect of grain size on the thermal conductivity of \(\hbox{Si}_3\hbox{N}_4\). J. Am. Ceram. Soc. 82, 777–779 (1999)
Kitayama, M., Hirao, K., Tsuge, A., Watari, K., Toriyama, M., Kanzaki, S.: Thermal conductivity of beta-Si\(_3\)N\(_4\): II, effect of lattice oxygen. J. Am. Ceram. Soc. 83, 1985–1992 (2000)
Shen, J.Z., Zhao, Z., Peng, H., Nygren, M.: Formation of tough interlocking microstructures in silicon nitride ceramics by dynamic ripening. Nature (London) 417, 266–269 (2002)
Cinibulk, M.K., Thomas, G., Johnson, S.M.: Strength and creep behavior of rare-earth disilicate-silicon nitride ceramics. J. Am. Ceram. Soc. 75, 2050–2055 (1992)
Hoffmann, M.J., Gu, H., Cannon, R.M.: Interfacial engineering for optimized properties II. In: Hall, E.L., Carter, C.B., Briant, C.L. (eds.) MRS Proceedings, p. 65. Pittsburgh, Pennsylvania, Mater. Res. Soc. (2000)
Satet, R.L., Hoffmann, M.J., Cannon, R.M.: Experimental evidence of the impact of rare-earth elements on particle growth and mechanical behaviour of silicon nitride. Mater. Sci. Eng. A 422, 66–76 (2006)
Tanaka, I., Pezzotti, G., Matsushuta, K.I., Miyamoto, Y., Okamoto, T.: Impurity-enhanced intergranular cavity formation in silicon nitride at high temperatures. J. Am. Ceram. Soc. 73, 752–759 (1990)
Ohji, T., Hirao, K., Kanzaki, S.: Fracture resistance behavior of highly anisotropic silicon nitride. J. Am. Ceram. Soc. 78, 3125–3128 (1995)
Becher, P.F., Sun, E.Y., Plucknett, K.P., Alexander, K.B., Hsueh, C.H., Lin, H.T., Waters, S.B., Westmoreland, C.G., Kang, E.S., Hirao, K., Brito, M.E.: Microstructural design of silicon nitride with improved fracture toughness: I, effects of grain shape and size. J. Am. Ceram. Soc. 81, 2821–2830 (1998)
Tajima, Y.: Development of high-performance silicon nitride ceramics and their applications. In: Chen, I.W. (ed.) Silicon Nitride Scientific and Technological Advances, p. 189. Pittsburgh, USA, journal = Mater. Res. Soc. (MRS Proc.) (1993)
Hoffmann, M.J.: Relationship between microstructure and mechanical properties of silicon nitride ceramics. Pure Appl. Chem. 67(6), 939–946 (1995)
Becher, P.F., Painter, G.S., Shibata, N., Satet, R.L., Hoffmann, M.J., Pennycook, S.J.: Influence of additives on anisotropic grain growth in silicon nitride ceramics. Mater. Sci. Eng. A 422, 85–91 (2006)
Becher, P.F., Painter, G.S., Shibata, N., Water, S.B., Lin, H.T.: Effect of rare-earth (RE) intergranular adsopriton on the phase transformation, microstructure evolution, and mechanical properties in silicon nitride with \(\hbox{RE}_2\hbox{O}_3\) + MgO additives: RE = La, Gd, and Lu. J. Am. Ceram. Soc. 91(7), 2328–2336 (2008)
Bonnell, D.A., Tien, T.Y., Rühle, M.: Controlled crystallization of the amorphous phase in silicon nitride ceramics. J. Am. Ceram. Soc. 70, 460–465 (1987)
Lee, W.W., Hilmas, G.E.: Microstructural changes in \(\beta\)-silicon nitride grains upon crystallizing the grain-boundary glass. J. Am. Ceram. Soc. 72, 1931–1937 (1989)
Greil, P.: Analysis of Microstructural Development and Mechanical Properties of \(\hbox{Si}_3\hbox{N}_4\) Ceramics. In: Taylor, D. (ed.) High-Temperature Strengthening of Silicon Nitride Ceramics, p. 645. Stoke-on-Trent, Canterbury (1987)
Bergström, L., Pugh, R.J.: Interfacial characterization of silicon nitride powders. J. Am. Ceram. Soc. 72, 103–109 (1989)
Keeble, H.J.: Structure and chemistry of interfaces in \(\hbox{Si}_3\hbox{N}_4\) ceramics studied by transmission electron microscopy. J. Ceram. Soc. Jpn. 105, 453–475 (1997)
Shibata, N., Pennycook, S.J., Gosnell, T.R., Painter, G.S., Shelton, W.A., Becher, P.F.: Observation of rare-earth segregation in silicon nitride ceramics at subnanometre dimensions. Nature 428(6984), 730–733 (2004)
Benco, L.: Chemical bonding at grain boundaries: MgO on \(\beta\)-\(\hbox{Si}_3\hbox{N}_4\). Surf. Sci. 327, 274–284 (1995)
Liu, A.Y., Cohen, M.L.: Structural properties and electronic structure of low-compressibility materials: \(\beta-\hbox{Si}_3\hbox{N}_4\) and hypothetical \(\beta-\hbox{C}_3\hbox{N}_4\). Phys. Rev. B 41, 10727 (1990)
Nakayasu, T., Yamada, T., Tanaka, I., Adachi, H.: Local chemical bonding around rare-earth ions in \(\alpha-\) and \(\beta-\hbox{Si}_3\hbox{N}_4\). J. Am. Ceram. Soc. 80, 2525–2532 (1997)
Nakayasu, T., Yamada, T., Tanaka, I., Adachi, H.: Calculation of grain-boundary bonding in rare-earth-doped \(\beta-\hbox{Si}_3\hbox{N}_4\). J. Am. Ceram. Soc. 81, 565–570 (1998)
Dudesek, P., Benco L.: Cation-aided joining of surfaces of \(\beta\)-silicon nitride: structural and electronic aspects. J. Am. Ceram. Soc. 81, 1248–1254 (1998)
Bermudez, V.M.: Theoretical study of the electronic structure of the \(\hbox{Si}_3\hbox{N}_4\)(0001) surface. Surf. Sci. 579(1), 11–20 (2005)
Wang, L., Wang, X., Tan, Y., Wang, H., Zhang, C.: Study of oxygen adsorption on beta-\(\hbox{Si}_3\hbox{N}_4\)(0001) by the density functional theory. Chem. Phys. 331(1), 92–95 (2006)
Belkada, R., Shibayanagi, T., Naka, M.: Ab initio calculations of the atomic and electronic structure of \(\beta\)-silicon nitride. J. Am. Ceram. Soc. 83, 2449 (2000)
Matsugana, K., Iwamoto, Y.: Ab initio molecular dynamics study of atomic structure and diffusion behavior in amorphous silicon nitride containing boron. J. Ceram. Soc. Jpn. 84, 2213–2219 (2001)
Pezzzotti, G., Painter, G.S.: Mechanisms of dopant-induced changes in intergranular \(\hbox{SiO}_2\) viscosity in polycrystalline silicon nitride. J. Am. Ceram. Soc. 85, 91–96 (2002)
Painter, G.S., Averill, F.W., Becher, P.F., Shibata, N., Van Benthem, K., Pennycook, S.J.: First-principles study of rare earth adsorption at beta-\(\hbox{Si}_3\hbox{N}_4\) interfaces. Phy. Rev. B 78, 214206 (2008)
Painter, G.S., Becher, P.F.: Bond energetics at intergranular interfaces in alumina-doped silicon nitride. J. Am. Ceram. Soc. 85, 65–67 (2002)
Yoshiya, M., Tatsumi, K., Tanaka, I., Adachi, H.: Theoretical study on the chemistry of intergranular glassy film in \(\hbox{Si}_3\hbox{N}_4\)-\(\hbox{SiO}_2\) ceramics. J. Am. Ceram. Soc. 85, 109–112 (2002)
Painter, G.S., Becher, P.F., Shelton, W.A., Satet, R.L., Hoffmann, M.J.: Theoretical study on the chemistry of intergranular glassy film in \(\hbox{Si}_3\hbox{N}_4\)-\(\hbox{SiO}_2\) ceramics. Phys. Rev. B 70, 144108 (2004)
Rulis, P., Chen, J., Ouyang, L., Ching, W.Y., Su, X., Garofalini, S.H.: Electronic structure and bonding of intergranular glassy films in polycrystalline \(\hbox{Si}_3\hbox{N}_4\): ab initio studies and classical molecular dynamics simulations. Phys. Rev. B 71, 235317 (2005)
Pennycook, S.J., Jesson, D.E.: High-resolution incoherent imaging of crystals. Phys. Rev. Lett. 64, 938–941 (1990)
Nellist, P.D., Pennycook, S.J.: The principles and interpretation of annular dark-field Z-contrast imaging. Adv. Imag. Elect. Phys. 113, 147–203 (2000)
Shibata, N., Painter, G.S., Becher, P.F., Pennycook, S.J.: Atomic ordering at an amorphous/crystal interface. Appl. Phys. Lett. 89(5), 051908 (2006)
Ziegler, A., Idrobo, J.C., Cinibulk, M.K., Kisielowski, C., Browning, N.D., Ritchie, R.O.: Interface structure and atomic bonding characteristics in silicon nitride ceramics. Science 306, 1768–1770 (2004)
Ziegler, A., Idrobo, J.C., Cinibulk, M.K., Kisielowski, C., Browning, N.D., Ritchie, R.O.: Atomic-resolution observations of semicrystalline intergranular thin films in silicon nitride. Appl. Phys. Lett. 88(4), 041919 (2006)
Van Benthem, K., Painter, G.S., Averill, F.W., Pennycook, S., Becher, P.F.: Experimental probe of adsorbate binding energies at internal crystalline/amorphous interfaces in Gd-doped \(\hbox{Si}_3\hbox{N}_4\). Appl. Phys. Lett. 92, 163110 (2008)
Winkelman, G.B., Dwyer, C., Marsh, C., Hudson, T.S., Nguyen-Manh, D., Döblinger, M., Cockayne, J.H.: The crystal/glass interface in doped \(\hbox{Si}_3\hbox{N}_4\). Mater. Sci. Eng. A 422, 77–84 (2006)
Winkelman, G.B., Dwyer, C., Hudson, T.S., Nguyen-Manh, D., Döblinger, M., Satet, R.L., Hoffmann, M.J., Cockayne, J.H.: Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride. Philos. Mag. Lett. 84, 755–762 (2004)
Walkosz, W., Klie, R.F., Öğüt, S., Borisevish, A., Becher, P.F., Pennycook, S.J., Idrobo, J.C.: Atomic resolution study of the interfacial bonding at \(\hbox{Si}_3\hbox{N}_4/\hbox{CeO}_{2-\delta}\) grain boundaries. Appl. Phys. Lett. 93, 053104 (2008)
Hohenberg, P., Kohn, W.: Inhomogeneous electron gas. Phys. Rev. 136(3B), B864–B871 (1964)
Payne, M.C., Teter, M.P., Allan, D.C., Arias, T., Joannopoulos, J.D.: Iterative minimization techniques for ab initio total energy calculations: molecular dynamics and conjugate gradients. Rev. Mod. Phys. 64(9), 30–35 (1992)
Kohn, W., Sham, L.J.: Self-consistent equations including exchange and correlation effects. Phys. Rev. 140(A4), A1133–A1138 (1965)
Muller, D.A.: Structure and bonding at the atomic scale by scanning transmission electron microscopy. Nat. Mater. 8, 263–270 (2009)
Pennycook, S.J.: Structure determination through Z-contrast microscopy. In: Merli, P.G., Vittor-Antisari, M. (eds.) Advances in Imaging and Electron Physics, vol. 123, p. 173. Academic Press, New York (2002)
Pennycook, S.J.: Z-contrast imaging in the scanning transmission electron microscope. In: Zhang, Z.F., Zhang, Z. (eds.) Progress in Transmission Electron Microscope 1: Concepts and Techniques, pp. 81–111. Springer, Tsinghyua (2001)
Egerton, R.F.: Applications of energy-loss spectroscopy. In: Electron Energy-Loss Spectrosocy in the Electron Microscopy 2nd edn., pp. 59–72. Plenum Press, New York (1996)
Idrobo, J.C., Öğüt, S., Yildirim, T., Klie, R.F., Browning, N.D.: Electronic and superconducting properties of oxygen-ordered \(\hbox{MgB}_2\) compounds of the form \(\hbox{Mg}_2\hbox{B}_3\hbox{O}_x\). Phys. Rev. B 70, 172503 (2004)
Bernholc, J.: Computational materials science: the era of applied quantum mechanics. Phys. Today 52(9), 30–35 (1999)
He, H., Sekine, T., Kobayashi, T., Hirosaki, H., Suzuki, I.: Shock-induced phase transition of \(\beta\)-\(\hbox{Si}_3\hbox{N}_4\) to \(c\)-\(\hbox{Si}_3\hbox{N}_4\). Phys. Rev. B 62(17), 11412–11417 (2000)
Ching, W.Y., Ouyang, L., Gale, J.D.: Full ab initio geometry optimization of all known crystalline phases of \(\hbox{Si}_3\hbox{N}_4\). Phys. Rev. B 61, 13 (2000)
Hao, S., Delley, B., Veprek, S., Stampfl, C.: Superhard nitride-based nanocomposites: role of interfaces and effect of impurities. Phys. Rev. Lett. 97, 086102 (2006)
Mo, S.D., Ouyang, L., Ching, W.Y., Tanaka, I., Koyama, Y., Riedel, R.: Interesting physical properties of the new spinel phase of \(\hbox{Si}_3\hbox{N}_4\) and \(\hbox{C}_3\hbox{N}_4\). Phys. Rev. Lett. 83(24), 5046–5049 (1999)
Kuwabara, A., Matsunaga, K., Tanaka, I.: Lattice dynamics and thermodynamical properties of silicon nitride polymorphs. Phys. Rev. B 78, 064104 (2008)
Paszkowicz, W., Minikayev, R., Piszora, P., Knapp, M., Bähtz, C., Recio, J.M., Marques, M., Mori-Sanchez, P., Gerward, L., Jiang, J.Z.: Thermal expansion of spinel-type \(\hbox{Si}_3\hbox{N}_4\). Phys. Rev. B 69, 052103 (2004)
Idrobo, J., Iddir, H., Öğüt, S., Ziegler, A., Browning, N.D., Ritchie, R.O.: Ab initio structural energetics of \(\beta-\hbox{Si}_3\hbox{N}_4\) surfaces. Phys. Rev. B (Rapid Communications) 72, 241301 (2005)
Skorodumova, N.V., Ahuja, R., Simak, S.I., Abrikosov, I.A., Johansson, B., Lundqvist, B.I.: Electronic, bonding, and optical properties of \(\hbox{CeO}_2\) and \(\hbox{Ce}_2\hbox{O}_3\) from first principles. Phys. Rev. B 64, 115108 (2001)
Andersson, D.A., Simak, S.I., Johansson, B., Abrikosov, I.A., Skorodumova, N.V.: Modeling of \(\hbox{CeO}_2\), \(\hbox{Ce}_2\hbox{O}_3\), and \(\hbox{CeO}_{2-x}\) in the LDA+\(U\) formalism. Phys. Rev. B 75, 035109 (2007)
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Walkosz, W. (2011). Silicon Nitride Ceramics. In: Atomic Scale Characterization and First-Principles Studies of Si₃N₄ Interfaces. Springer Theses. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-7817-2_1
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