Abstract
This chapter describes the model level 0 introduced in the previous chapter. One main goal is to provide the reader with sufficient knowledge on the adopted modeling approach, characteristics, basic structure, advantages, and drawbacks of its use and associated analysis methods.
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- 1.
All circuit elements considered herein are assumed time invariant, unless otherwise specified.
- 2.
Unlike in the case of the channel and body diode, look-up tables are employed for the full representation of the capacitances since no suitable empirical function was found. Generally, simple fitting functions are preferred over look-up tables for better scaling capabilities, compactness, and computation speed, particularly when multivariable dependencies need to be implemented and high accuracy is required.
- 3.
The phase of the impedance is not considered for parameter fitting since the distributed nature of the underlying skin effect cannot be accurately represented with the proposed models. A far more complex ladder network may be required for that purpose. The simple lumped-based skin effect model aims at representing the fundamentals of such magnetic phenomena by first-order approximations. Estimations of the loss contribution of this effect will dictate whether the approximations are satisfactory enough or, on the contrary, further model refinements are demanded.
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López, T., Elferich, R., Alarcón, E. (2011). Model Level 0: Switching Behavior of Power MOSFETs. In: Voltage Regulators for Next Generation Microprocessors. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-7560-7_2
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DOI: https://doi.org/10.1007/978-1-4419-7560-7_2
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