Thinned Backside-Illuminated (BSI) Imagers

Chapter

Abstract

Backside-illuminated (BSI) imagers are becoming popular due to their enhanced light sensitivity. During their fabrication advanced Si wafer thinning is used in combination with backside surface passivation techniques. In this section both technology for thin (hybrid) backside-illuminated imagers as well as the trade-offs they present between quantum efficiency and crosstalk are discussed and illustrated, with the use of imec imager results.

Keywords

Recombination Boron Ductility Expense Trench 

References

  1. 1.
    Hopkinson GR, Goodman TM, Prince SR (2004) A guide to the use and calibration of detector array equipment. SPIE Optical Engineering Press, BellinghamGoogle Scholar
  2. 2.
    ESA/SCC basic specification no. 25000 (July 1993) Electro-optical test methods for charge coupled devices, issue 1Google Scholar
  3. 3.
    De Munck K et al. (2006) High performance hybrid and monolithic backside thinned CMOS imagers realised using a new integration process. In: Proceedings of the IEEE international electron devices meeting, San Francisco, 2006, pp 139–142Google Scholar
  4. 4.
    Bai Y et al. (2008) Teledyne Imaging Sensors: Silicon CMOS imaging technologies for x-ray, UV, visible, and near infrared. Proc SPIE 7021:702102. doi:10.1117/12.792316 (2008) CrossRefGoogle Scholar
  5. 5.
    Minoglou K et al. (2008) Reduction of electrical crosstalk in hybrid backside illuminated CMOS imagers using deep trench isolation. In: Proceedings of the IEEE international interconnect technology conference, San Francisco, June 2008Google Scholar

Copyright information

© Springer Science+Business Media, LLC 2011

Authors and Affiliations

  1. 1.Interuniversity Microelectronics Centre (IMEC)LeuvenBelgium

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