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Gate Level Modeling and Simulation

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Soft Errors in Modern Electronic Systems

Part of the book series: Frontiers in Electronic Testing ((FRET,volume 41))

Abstract

This chapter presents an overview of a methodology for analyzing the behavior of combinational and sequential cells regarding “Single-Event Multiple-Transients” (SEMT) caused by nuclear reactions induced by atmospheric neutrons. The methodology uses a combination of Monte Carlo-based selection of nuclear reactions, simulation of the carriers transport in the device, and SPICE simulation. The effects of nuclear particles on the gates are monitored at the gate output by means of transient duration, amplitude, and associated occurrence probability.

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Acknowledgments

The authors would like to thank Antonin Bougerol, Claudia Rusu, Jean-Marie Palau, Frederic Wrobel, Remi Gaillard, Guillaume Hubert, and et Seddik Benhammadi for their important contributions in the theory and simulation methodology presented in this chapter.

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Authors and Affiliations

  1. Head of Electronic Systems Department, Head of Operations Sensors, Electronics and System Integration (TCC4) EADS Innovation Works, 12 rue Pasteur, 92152, Suresnes, France

    Nadine Buard

Authors
  1. Nadine Buard
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  2. Lorena Anghel
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Corresponding author

Correspondence to Nadine Buard .

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Editors and Affiliations

  1. Grenoble INP, CNRS, UJF, TIMA Laboratory, av. Felix Viallet 46, Grenoble CX, 38031, France

    Michael Nicolaidis

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Buard, N., Anghel, L. (2011). Gate Level Modeling and Simulation. In: Nicolaidis, M. (eds) Soft Errors in Modern Electronic Systems. Frontiers in Electronic Testing, vol 41. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-6993-4_4

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  • DOI: https://doi.org/10.1007/978-1-4419-6993-4_4

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  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4419-6992-7

  • Online ISBN: 978-1-4419-6993-4

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