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Terrestrial Neutron-Induced Failures in Semiconductor Devices and Relevant Systems and Their Mitigation Techniques

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Dependability in Electronic Systems

Abstract

Scaling down of semiconductor devices to sub-100 nm technology encounters a wide variety of technical challenges like V th variation [1], negative bias temperature instability (NBTI) [2], short-channel effect [3], gate leakage [4], and so on. Terrestrial neutron-induced single-event upset (SEU) is one of such key issues that can be a major setback in scaling.

Eishi Ibe

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  1. Hitachi Research Laboratory, Hitachi, Ltd., Hitachi-shi, 319-1292, Ibaraki, Japan

    Nobuyasu Kanekawa

  2. Production Engineering Research Laboratory, Hitachi, Ltd., Yokohama-shi, 244-0817, Kanagawa, Japan

    Eishi H. Ibe, Takashi Suga & Yutaka Uematsu

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Kanekawa, N., Ibe, E.H., Suga, T., Uematsu, Y. (2011). Terrestrial Neutron-Induced Failures in Semiconductor Devices and Relevant Systems and Their Mitigation Techniques. In: Dependability in Electronic Systems. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-6715-2_2

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