Conclusions

Chapter

Abstract

In this work, the potentials of subthreshold MOS devices for implementing power-performance scalable integrated systems have been studied. It has been shown that the exponential I-V characteristics of this type of devices can help to implement very widely tunable analog and digital integrated circuits. Meanwhile, low current density of transistors in this region of operation makes them very suitable for implementing ultra-low-power circuits.

Keywords

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Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  1. 1.Microelectronic Systems Lab. (LSM)Ecole Polytechnique Fédérale de Lausanne (EPFL)LausanneSwitzerland

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