Constrained Deformation of Materials pp 77-123 | Cite as

# Patterned Films in Micro-devices

## Abstract

In this chapter attention is directed to patterned thin-film structures, where the film material exists as individual lines of various cross-section geometries. Contrary to the case of continuous films in Chap. 3, the deformation field in the line structure is dominated by the edge effect. In addition, the film segment may be entirely surrounded by one or more different materials so a severely confined condition is in place. The most representative example is the metal interconnects in modern integrated circuits. The interconnect structure is composed of several layers of Cu or Al lines embedded within the dielectric material (traditionally silica glass based, SiO_{x}) on top of the Si substrates. They serve as the connection between the functional elements (transistors) and between the transistors and the outside packaging structure. A schematic illustrating a two-level interconnect structure is shown in Fig. 4.1 (see also Fig. 1.4).

### Keywords

Titanium Porosity SiO2 Anisotropy Brittle### References

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