Abstract
The power MOSFET structures discussed in the previous chapters utilize a one-dimensional junction for supporting the drain voltage when operating in the blocking mode. As discussed and derived in Chap. 1, the smallest specific on-resistance that can be achieved in these devices is limited to the ideal specific on-resistance, which is given by:
A significantly smaller specific on-resistance can be achieved by utilizing a two-dimensional charge coupling effect that alters the electric field distribution from the triangular shape in a one-dimensional case to a rectangular shape for the two-dimensional case.
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Baliga, B.J. (2010). CC-MOSFET Structure. In: Advanced Power MOSFET Concepts. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-5917-1_5
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DOI: https://doi.org/10.1007/978-1-4419-5917-1_5
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