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CC-MOSFET Structure

  • B. Jayant Baliga
Chapter

Abstract

The power MOSFET structures discussed in the previous chapters utilize a one-dimensional junction for supporting the drain voltage when operating in the blocking mode. As discussed and derived in Chap. 1, the smallest specific on-resistance that can be achieved in these devices is limited to the ideal specific on-resistance, which is given by:
$$ {{\hbox{R}}_{{\mbox{on - ideal}}}}{\;=\;}\frac{{{{\rm 4B}}{{{\rm V}}^2}}}{{{{\varepsilon}_{{\rm S}}}{{\mu}_{{\rm n}}}{\hbox{E}}_{{\rm C}}^3}} $$
(5.1)
A significantly smaller specific on-resistance can be achieved by utilizing a two-dimensional charge coupling effect that alters the electric field distribution from the triangular shape in a one-dimensional case to a rectangular shape for the two-dimensional case.

Keywords

Breakdown Voltage Gate Bias Gate Electrode Drift Region Drain Bias 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  • B. Jayant Baliga
    • 1
  1. 1.Department of Electrical and Computer EngineeringNorth Carolina State UniversityRaleighUSA

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