Abstract
Si CMOS scaling is reaching its physical limit at the 15 nm technology node and beyond. III-V compound semiconductor is one of the leading candidates to replace main-stream Si as n-channel material due its much higher electron mobility. Lacking a suitable gate insulator, practical III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) remain all but a dream for more than four decades. The physics and chemistry of III-V compound semiconductor surfaces or interfaces are problems so complex that even after enormous research efforts understanding is still limited. Most of the research is focused on surface pretreatments, oxide formation and dielectric materials. Less attention is given to the III-V substrate itself. In this chapter, the history and present status of III-V MOSFET research is briefly reviewed. An empirical model for high-k/III-V interfaces is proposed based on the experimental works we performed on III-V MOSFETs using ex-situ atomic-layer-deposited high-k dielectrics and also reported works in the literature using in-situ molecular beam expitaxy grown Ga2O3(Gd2O3) as gate dielectric. The results show that physics related to III-V substrates is as important as surface chemistry and gate oxide properties for realizing high-performance III-V MOSFETs. The central concept of this empirical model is that the band alignment between trap neutral level (E0) and conduction band minimum (CBM) or valence band maximum (VBM) and the magnitude of interface trap density governs the device performance of inversion-mode III-V MOSFETs.
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References
H. Becke, R. Hall, and J. White, Solid-State Electron., 8, 813 (1965).
H.W. Becke and J.P. White, Electronics, 40, 82 (1967).
L. Messick, Solid-State Electron., 22, 71 (1979).
K. Kamimura and Y. Sakai, Thin Solid Films, 56, 215 (1979).
T. Mimura and M. Fukuta, IEEE Trans. Electron Devices, 27, 1147 (1980).
B. Bayraktaroglu, W.M. Theis, and F.L. Schuermeyer, in 37th Device Research Conference, Abstracts, p. WP-A3, 1979.
H.C. Casey, Jr., A.Y. Cho, and E.H. Nicollian, Appl. Phys. Lett., 32, 678 (1978).
M.R. Melloch, N. Otsuka, J.M. Woodall, A.C. Warren, and J.L. Freeouf, Appl. Phys. Lett., 57, 1531 (1990).
W.T. Tsang, Appl. Phys. Lett., 33, 429 (1979).
X. Li, Y. Cao, D.C. Hall, P. Fay, B. Han, A. Wibowo, and N. Pan, IEEE Electron Device Lett., 25, 772 (2004).
D.N. Butcher and B.J. Sealy, Electron. Lett., 13, 558 (1977).
H. Hasegawa, K.E. Forward, and H.L. Hartnagel, Appl. Phys. Lett., 26, 567 (1975).
R.A. Logan, B. Schwartz, and W.J. Sundburg, J. Electronchem. Soc., 120, 1385 (1973).
O.A. Weinreich, J. Appl. Phys., 37, 2924 (1966).
K. Yamasaki and T. Sugano, Jap. J. Appl. Phys., 17, 321 (1978).
N. Yokoyama, T. Mimura, K. Odani, and M. Fukuta, Appl. Phys. Lett., 32, 58 (1978).
L.A. Chesler and G.Y. Robinson, Appl. Phys. Lett., 32, 60 (1978).
R.P.H. Chang and A.K. Sinha, Appl.Phys. Lett., 29, 56 (1976).
V.M. Bermudez, J. Appl. Phys., 54, 6795 (1983).
C.F. Yu, M.T. Schmidt, D.V. Podlesnik, E.S. Yang, and R.M. Osgood, Jr., J. Vac. Sci. Technol., A 6, 754 (1988).
S.D. Offsey, J.M. Woodall, A.C. Warren, P.D. Kirchner, T.I. Chappell, and G.D. Pettit, Appl. Phys. Lett., 48, 475 (1986).
C.W. Wilmsen, Physics and Chemistry of III-V Compound Semiconductor Interfaces. New York: Plenum, 1985.
C.L. Hinkle, M. Milojevic, B. Brennan, A.M. Sonnet, F.S. Aguirre-Tostado, G.J. Hughes, E.M. Vogel, and R.M. Wallace, Appl. Phys. Lett., 94, 162101 (2009).
M. Xu, K. Xu, R. Contreras, M. Milojevic, T. Shen, O. Koybasi, Y.Q. Wu, R.M. Wallace, and P.D. Ye, in IEDM Tech. Dig., 2009 (to be published).
A.M. Cowley and S.M. Sze, J. Appl.Phys., 36, 3212 (1965).
V. Heine, Phys. Rev., 138, 1689 (1965).
C. Tejedor and F. Flores, J. Phys. C-Solid State Phys., 11, L19 (1978).
W.E. Spicer, P.W. Chye, P.R. Skeath, C.Y. Su, and I. Lindau, J. Vac. Sci. & Technol., 16, 1422 (1979).
H. Hasegawa and H. Ohno, J. Vac. Sci. & Technol., B 4, 1130 (1986).
J. Tersoff, Phys. Rev. Lett., 52, 465 (1984).
J. Tersoff, Phys. Rev. B, 32, 6968 (1985).
W.E. Spicer, I. Lindau, P. Skeath, C.Y. Su, and P. Chye, Phys. Rev. Lett., 44, 420 (1980).
J. Robertson, Appl. Phys. Lett., 94, 152104 (2009).
P.D. Ye, J. Vac. Sci. Technol., A 26, 697 (2008).
Y. Xuan, P.D. Ye, and T. Shen, Appl. Phys. Lett., 91, 232107 (2007).
M. Xu, Y.Q. Wu, O. Koybasi, T. Shen, and P.D. Ye, Appl. Phys. Lett., 94, 212104 (2009).
W.W. Hooper and W.I. Lehrer, Proceedings of IEEE., 55, 1237 (1967).
R. Dingle, H.L. Stormer, A.C. Gossard, and W. Wiegmann, Appl. Phys. Lett., 33, 665 (1978).
H.L. Stormer, R. Dingle, A.C. Gossard, W. Wiegmann, and M.D. Sturge, Solid State Commun., 29, 705 (1979).
T. Mimura, S. Hiyamizu, T. Fujii, and K. Nanbu, Jpn. J. Appl. Phys., 19, L225 (1980).
D. Delagebeaudeuf, P. Delescluse, P. Etienne, M. Laviron, J. Chaplart, and N.T. Linh, Electron. Lett., 16, 667 (1980).
B.J. Skromme, C.J. Sandroff, E. Yablonovitch, and T. Gmitter, Appl. Phys. Lett., 51, 2022 (1987).
E. Yablonovitch, C.J. Sandroff, R. Bhat, and T. Gmitter, Appl. Phys. Lett., 51, 439 (1987).
A. Callegari, P.D. Hoh, D.A. Buchanan, and D. Lacey, Appl. Phys. Lett., 54, 332 (1989).
H. Hasegawa, M. Akazawa, K.I. Matsuzaki, H. Ishii, and H. Ohno, Jpn. J. Appl. Phys., Part 2 L27, L2265 (1988).
S. Tiwari, S.L. Wright, and J. Batey, IEEE Electron Device Lett., 9, 488 (1988).
G.G. Fountain, S.V. Hattangady, D.J. Vitkavage, R.A. Rudder, and R.J. Markunas, Electron. Lett., 24, 1134 (1988).
G.G. Fountain, R.A. Rudder, S.V. Hattangady, R.J. Markunas, and J.A. Hutchby, in IEDM Tech. Dig., Dec. 1989, pp. 887–889.
M. Akazawa, H. Ishii, and H. Hasegawa, Jpn. J. Appl. Phys., 30, 3744 (1991).
D.S.L. Mui, H. Liaw, A.L. Demirel, S. Strite, and H. Morkoc, Appl. Phys. Lett., 59, 2847 (1991).
A. Callegari, D.K. Sadana, D.A. Buchanan, A. Paccagnella, E.D. Marshall, M.A. Tischler, and M. Norcott, Appl. Phys. Lett., 58, 2540 (1991).
S. Koveshnikov, W. Tsai, I. Ok, J.C. Lee, V. Torkanov, M. Yakimov, and S. Oktyabrsky, Appl. Phys. Lett., 88, 022106 (2006).
I.J. Ok, H.S. Kim, M.H. Zhang, C.Y. Kang, S.J. Rhee, C.W. Choi, S.A. Krishnan, T. Lee, F. Zhu, G. Thareja, and J.C. Lee, IEEE Electron Device Lett., 27, 145 (2006).
S.J. Koester, E.W. Kiewra, Y. Sun, D.A. Neumayer, J.A. Ott, M. Copel, D.K. Sadana, D.J. Webb, J. Fompeyrine, J.-P. Locquet, C. Marchiori, M. Sousa, and R. Germann, Appl. Phys. Lett., 89, 042104 (2006).
D. Shahrjerdi, M.M. Oye, A.L. Holmes, and S.K. Banerjee, Appl. Phys. Lett., 89, 043501 (2006).
J.P. de Souza E. Kiewra, Y. Sun, A. Callegari, D.K. Sadana, G. Shahidi, D.J. Webb, J. Fompeyrine, R. Germann, C. Rossel, and C. Marchiori, Appl. Phys. Lett., 92, 153508 (2008).
H.C. Chin, M. Zhu, C.H. Tung, G.S. Samudra, and Y.C. Yeo, IEEE Electron Device Lett., 29, 553 (2008).
M. Passlack, M. Hong, and J.P. Mannaerts, Appl. Phys. Lett., 68, 1099 (1996).
M. Passlack, M. Hong, J.P. Mannaerts, R.L. Opila, S.N.G. Chu, N. Moriya, F. Ren, and J.R. Kwo, IEEE Electron Device Lett., 44, 214 (1997).
M. Hong, J. Kwo, A.R. Kortan, J.P. Mannaerts, and A.M. Sergent, Science, 283, 1897 (1999).
F. Ren, M. Hong, W.S. Hobson, J.M. Kuo, J.R. Lothian, J.P. Mannaerts, J. Kwo, S.N.G. Chu, Y.K. Chen, and A.Y. Cho, Solid-State Electron., 41, 1751 (1997).
Y.C. Wang, M. Hong, J.M. Kuo, J.P. Mannaerts, J. Kwo, H.S. Tsai, J.J. Krajewski, Y.K. Chen, and A.Y. Cho, IEEE Electron Devices Lett., 20, 457 (1999).
F. Ren, J.M. Kuo, M. Hong, W.S. Hobson, J.R. Lothian, J. Lin, H.S. Tsai, J.P. Mannaerts, J. Kwo, S.N.G. Chu, Y.K. Chen, and A.Y. Cho, IEEE Electron Device Lett., 19, 309 (1998).
M. Hong, J.N. Bailargeon, J. Kwo, J.P. Mannaerts, and A.Y. Cho, in Proceeding of IEEE 27th International Symposium on Compound Semiconductors, pp. 345–350, (2000).
Y.C. Wang, M. Hong, J.M. Kuo, J.P. Mannaerts, H.S. Tsai, J. Kwo, J. J. Krajewski, Y. K. Chen, and A. Y. Cho, Electron. Lett., 35, 667 (1999).
B. Yang, P.D. Ye, J. Kwo, M.R. Frei, H.J.L. Gossmann, J.P. Mannaerts, M. Sergent, M. Hong, and K.N.J. Bude, J. Cryst. Growth., 251, 837 (2003).
T.D. Lin, H.C. Chiu, P. Chang, L.T. Tung, C.P. Chen, M. Hong, J. Kwo, W. Tsai, and Y.C. Wang, Appl. Phys. Lett., 93, 033516 (2008).
M. Passlack, N. Medendorp, R. Gregory, and D. Braddock, Appl. Phys. Lett., 83, 5262 (2003).
K. Rajagopalan, J. Abrokwah, R. Droopad, and M. Passlack, IEEE Electron Device Lett., 27, 959 (2006).
R.J.W. Hill, D.A.J. Moran, X. Li, H. Zhou, D. Macintyre, S. Thoms, A. Asenov, P. Zurcher, K. Rajagopalan, J. Abrokwah, R. Droopad, M. Passlack, and L.G. Thayne, IEEE Electron Device Lett., 28, 1080 (2007).
M.J. Hale, S.I. Yi, J.Z. Sexton, A.C. Kummel, and M. Passlack, J. Chem. Phys., 119, 6719 (2003).
P.D. Ye, G.D. Wilk, J. Kwo, B. Yang, H.-J.L. Gossmann, M. Frei, S.N.G. Chu, J.P. Mannaerts, M. Sergent, M. Hong, K.K. Ng, and J. Bude, IEEE Electron Device Lett., 24, 209 (2003).
P.D. Ye, G.D. Wilk, B. Yang, J. Kwo, S.N.G. Chu, S. Nakahara, H.-J.L. Gossmann, J.P. Mannaerts, M. Hong, K.K. Ng, and J. Bude, Appl. Phys. Lett., 83, 180 (2003).
P.D. Ye, G.D. Wilk, B. Yang, J. Kwo, H.-J.L. Gossmann, M. Hong, K.K. Ng, and J. Bude, Appl. Phys. Lett., 84, 434 (2004).
P. D. Ye, G.D. Wilk, B. Yang, S.N.G. Chu, K.K. Ng, and J. Bude, Solid-State Electron., 49, 790 (2005).
P.D. Ye, B. Yang, K.K. Ng, J. Bude, G.D. Wilk, S. Halder, and J.C.M. Hwang, Appl.Phys. Lett., 86, 063501 (2005).
Y. Xuan, H.C. Lin, P.D. Ye, and G.D. Wilk, Appl. Phys. Lett., 89, 132103 (2006).
Y. Xuan, H.C. Lin, and P.D. Ye, ECS Transactions, 3, 59 (2006).
Y. Xuan, H.C. Lin, and P.D. Ye, IEEE Trans. Electron Devices, 54, 1811 (2007).
Y.Q. Wu, T. Shen, P.D. Ye, and G.D. Wilk, Appl. Phys. Lett., 90, 143504 (2007).
T. Yang, Y. Xuan, D. Zemlyanov, T. Shen, Y.Q. Wu, J.M. Woodall, P.D. Ye, F.S. Aguirre-Tostado, M. Milojevic, S. McDonnell, and R.M. Wallace, Appl. Phys. Lett., 91, 142122 (2007).
T. Yang, Y. Liu, P.D. Ye, Y. Xuan, H. Pal, and M.S. Lundstrom, Appl. Phys. Lett., 92, 252105 (2008).
M.M. Frank, G.D. Wilk, D. Starodub, T. Gustafsson, E. Garfunkel, Y.J. Chabal, J. Grazul, and D.A. Muller, Appl. Phys. Lett., 86, 152904 (2005).
M.L. Huang, Y.C. Chang, C.H. Chang, Y.J. Lee and P. Chang, J. Kwo, T.B. Wu, and M. Hong, Appl. Phys. Lett., 87, 252104 (2005).
C.H. Chang, Y.K. Chiou, Y.C. Chang, K.Y. Lee, T.D. Lin, T.B. Wu, M. Hong, and J. Kwo, Appl. Phys. Lett., 89, 242911 (2006).
C.L. Hinkle, A.M. Sonnet, E.M. Vogel, S. McDonnell, G.J. Hughes, M. Milojevic, B. Lee, F.S. Aguirre-Tostado, K.J. Choi, H.C. Kim, J. Kim, and R.M. Wallace, Appl. Phys. Lett., 92, 071901 (2008).
Y. Xuan, Y.Q. Wu, H.C. Lin, T. Shen, and P.D. Ye, in Proceeding of 65th Device Research Conference, Notre Dame, USA, 2007.
Y. Xuan, Y.Q. Wu, H.C. Lin, T. Shen, and P.D. Ye, IEEE Electron Devices Lett., 28, 935 (2007).
Y. Xuan, Y.Q. Wu, T. Shen, T. Yang, and P.D. Ye, in IEDM Tech. Dig., Dec. 2007, pp. 637–640.
Y. Xuan, Y.Q. Wu, and P.D. Ye, IEEE Electron Device Lett., 29, 294 (2008).
Y. Xuan, T. Shen, M. Xu, Y.Q. Wu, and P.D. Ye, in IEDM Tech. Dig., Dec. 2008, pp. 371–374.
Y.Q. Wu, W.K. Wang, O. Koybasi, D.N. Zakharov, E.A. Stach, S. Nakahara, J.C.M. Hwang, and P.D. Ye, IEEE Electron Device Lett., 30, 700 (2009).
Y.Q. Wu, M. Xu, R. Wang, O. Koybasi, and P.D. Ye, in IEDM Tech. Dig., Dec. 2009, to be published.
Y.Q. Wu, R. Wang, T. Shen, J.J. Gu, and P.D. Ye, in IEDM Tech. Dig., Dec. 2009, to be published.
M. Zhu, C. H. Tung, and Y. C. Yeo, Appl. Phys. Lett., 89, 202903 (2006).
H.L. Lu, L. Sun, S.J. Ding, M. Xu, D.W. Zhang, and L.K. Wang, Appl. Phys. Lett., 89, 152910 (2006).
G.K. Dalapati, Y. Tong, W.Y. Loh, H.K. Mun, and B.J. Cho, IEEE Trans. Electron Devices, 54, 1831 (2007).
D. Shahrjerdi, E. Tutuc, and S. Banerjee, Appl. Phys. Lett., 91, 063501 (2007).
A.M. Sonnet, C.L. Hinkle, M.N. Jivani, R.A. Chapman, G.P. Pollack, R.M. Wallace, and E.M. Vogel, Appl. Phys. Lett., 93, 122109 (2008).
U. Singisetti, M.A. Wistey, G.J. Burek, A.K. Baraskar, J. Cagnon, B.J. Thibeault, S. Stemmer, A.C. Gossard, M.J.W. Rodwell, E. Kim, B. Shin, P.C. McIntyre, and Y.J. Lee, in Proceeding of IEEE 67th Devcie Research Conference, 2009, pp. 253–354.
R. Chau, S. Datta, and A. Majumdar, in Proc. IEEE CSIC Dig., 2005, pp. 17–20.
S. Datta, T. Ashley, J. Brask, L. Buckle, M. Doczy, M. Emeny, D. Hayes, K. Hilton, R. Jefferies, T. Martin, T.J. Phillips, D. Wallis, P. Wilding, and R. Chau, in IEDM Tech. Dig., 2005, pp. 783–786.
M. Radosvljevic, T. Ashley, A. Andreev, S.D. Coomber, G. Dewey, M.T. Emeny, M. Fearn, D.G. Hayes, K.P. Hilton, M.K. Hudait, R. Jefferies, T. Martin, R. Pillarisetty, W. Rachmady, T. Rakshit, S.J. Smith, M.J. Uren, D.J. Wallis, P.J. Wilding, and R. Chau, in IEDM Tech. Dig., pp. 727–730, Dec. 2008.
D. H. Kim, J. A. del Alamo, J. H. Lee, and K. S. Seo, IEEE Trans. Electron Devices, 54, 2606 (2007).
D. H. Kim, and J. A. del Alamo, IEEE Electron Device Lett., 29, 830 (2008).
G.D. Wilk, R.M. Wallace, and J.M. Anthony, J. Appl. Phys., 89, 5243 (2001).
D.D. Nolte, Solid-State Electron., 33, 295 (1990).
H. Hasegawa and M. Akazawa, Appl. Surf. Sci., 254, 8005 (2008).
J. Robertson and B. Falabretti, J. Appl. Phys., 100, 014111 (2006).
A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E.K. Evangelou, Appl. Phys. Lett., 89, 252110 (2006).
W.E. Spicer, P.W. Chye, P.R. Skeath, C.Y. Su, and I. Lindau, J. Vac. Sci. Tech., 16, 1422 (1979).
D. Varghese, Y. Xuan, Y.Q. Wu, T. Shen, P.D. Ye, and M.A. Alam, in IEDM Tech. Dig., 2008, pp. 379–382.
M.V. Fischetti and S.E. Laux, IEEE Trans. Electron Devices, 38, 650 (1991).
D. L. Lile and M.J. Taylor, J. Appl. Phys., 54, 260 (1983).
D. L. Lile, Solid-State Electron., 21, 1199 (1978).
D. L. Lile, D. A. Collins, L. G. Meiners, and L. Messick, Electronics Lett., 14, 657 (1978).
T. Kawakami and M. Okamura, Electronics Lett., 15, 502 (1979).
Y. Shinoda and T. Kobayashi, Solid State Electron., 25, 1119 (1982).
W.F. Tseng, M.L. Bark, H.B. Dietrich, A. Christou, R.L. Henry, W.A. Schmidt, and N.S. Saks, IEEE Electron Device Lett., 2, 299 (1981).
Y.Q. Wu, Y. Xuan, T. Shen, P.D. Ye, Z. Cheng, and A. Lochtefeld, Appl. Phys. Lett., 91, 022108 (2007).
S. Oktyabrsky, V. Tokranov, S. Koveshnikov, M. Yakimov, R. Kambhampati, H. Bakhru, R. Moore, and W. Tsai, J. Cryst. Growth., 311, 1950 (2009).
N. Goel, D. Heh, S. Koveshnikov, I. Ok, S. Oktyabrsky, V. Tokranov, R. Kambhampati, M. Yakimov, Y. Sun, P. Pianetta, C.K. Gaspe, M.B. Santos, J. Lee, S. Datta, P. Majhi, and W. Tsai, in IEDM Tech. Dig., pp. 363–366 (2008).
P.S. Dutta, H.L. Bhat, and V. Kumar, J. Appl. Phys., 81, 5821 (1997).
N. Li, E.S. Harmon, J. Hyland, D.B. Salzman, T.P. Ma, Y. Xuan, and P.D. Ye, Appl. Phys. Lett., 92, 143507 (2008).
T. Yang, Y. Xuan, P.D. Ye, W. Wang, J.C.M. Hwang, D. Lubyshev, J.M. Fastenau, W.K. Liu, T.D. Mishima, and M.B. Santos, in Proceeding of TMS 2007 Electronic Materials Conferences, Notre Dame, USA, 2007.
Y.Q. Wu, T. Shen, P.D. Ye, and G.D. Wilk, Appl. Phys. Lett., 90, 143504 (2007).
Y.C. Chang, W.H. Chang, H.C. Chiu, L.T. Tung, C.H. Lee, K.H. Shiu, M. Hong, J. Kwo, J.M. Hong, and C.C. Tsai, Appl. Phy. Lett., 93, 053504 (2008).
W. Huang, T. Khan, and T.P. Chow, IEEE Electron Devices Lett., 27, 796 (2006).
Acknowledgments
The authors would thank National Science Foundation, SRC FCRP MSD Focus Center, Army Research Office, and SRC CSR Program for supporting this work. The contributions from T. Shen, O. Koybasi, R. Wang, and H.C. Lin are greatly appreciated. The authors would like also to thank H. Hasegawa, J. Robertson, R.M. Wallace, G.D. Wilk, M. Hong, K.K. Ng, B. Yang, M.M. Frank, J. del Alamo, D.A. Antoniadis, A. Kummel, S. Oktyabrsky, M.S. Lundstrom, J.M. Woodall, M.A. Alam, and J.C.M. Hwang for the valuable discussions.
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Ye, P., Xuan, Y., Wu, Y., Xu, M. (2010). Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model. In: Oktyabrsky, S., Ye, P. (eds) Fundamentals of III-V Semiconductor MOSFETs. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-1547-4_7
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