Abstract
A comprehensive overview of density functional theory simulations of high-k oxide/III-V semiconductor interfaces is presented. The methodologies of realistic amorphous high-k oxide generation by hybrid classical-DFT molecular dynamics are compared. The simulation techniques, oxide/semiconductor model designs and rules for formation of unpinned high-k oxide/semiconductor interfaces are discussed. The density-functional theory molecular dynamics simulations of a-Al2O3/InGaAs and a-Al2O3/InAlAs/InGaAs stacks are presented and analyzed.
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Chagarov, E., Kummel, A. (2010). Density Functional Theory Simulations of High-k Oxides on III-V Semiconductors. In: Oktyabrsky, S., Ye, P. (eds) Fundamentals of III-V Semiconductor MOSFETs. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-1547-4_5
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