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Device Physics and Performance Potential of III-V Field-Effect Transistors

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Fundamentals of III-V Semiconductor MOSFETs

Abstract

The device physics and technology issues for III-V transistors are examined from a simulation perspective. To examine device physics, an InGaAs HEMT structure similar to those being explored experimentally is analyzed. The physics of this device is explored using detailed, quantum mechanical simulations based on the non-equilibrium Green’s function formalism. In this chapter, we: (1) elucidate the essential physics of III-V HEMTs, (2) identify key technology challenges that need to be addressed, and (3) estimate the expected performance advantage for III-V transistors.

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Acknowledgement

This work was supported by the Focus Center Research Program (FCRP) through the center for Materials, Structures, and Devices (MSD). Computational support was provided by the Network for Computational Nanotechnology which is supported by the National Science Foundation under Grant No. EEC—0634750. One of the authors (MSL) acknowledges illuminating discussions with M.V. Fischetti at the University of Massachusetts and T. Rakshit at Intel.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA

    Yang Liu

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  1. Yang Liu
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  2. Himadri S. Pal
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  3. Mark S. Lundstrom
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  4. Dae-Hyun Kim
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  5. Jesús A. del Alamo
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  6. Dimitri A. Antoniadis
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Correspondence to Yang Liu .

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  1. College of Nanoscale Science &, University at Albany - SUNY, Fuller Road 255, Albany, 12203, U.S.A.

    Serge Oktyabrsky

  2. Birck Nanotechnology Center, Purdue University, W. State Street 1205, West Lafayette, 47907-2057, U.S.A.

    Peide Ye

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Liu, Y., Pal, H., Lundstrom, M., Kim, DH., Alamo, J., Antoniadis, D. (2010). Device Physics and Performance Potential of III-V Field-Effect Transistors. In: Oktyabrsky, S., Ye, P. (eds) Fundamentals of III-V Semiconductor MOSFETs. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-1547-4_3

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  • DOI: https://doi.org/10.1007/978-1-4419-1547-4_3

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