Properties and Trade-Offs of Compound Semiconductor MOSFETs

  • Tejas Krishnamohan
  • Donghyun Kim
  • Krishna C. Saraswat
Chapter

Abstract

In order to continue the scaling of silicon-based CMOS and maintain the historic progress in information processing and transmission, innovative device structures and new materials are required. A channel material with high mobility and therefore high injection velocity can increase ON current and reduce delay. Currently, strained-Si is the dominant technology for high performance MOSFETs. However, looking into future high mobility III-V materials can offer several advantages over even very highly strained Si.

Keywords

Anisotropy GaAs Expense GaSb Arsenide 

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Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  • Tejas Krishnamohan
    • 1
  • Donghyun Kim
  • Krishna C. Saraswat
  1. 1.Center for Integrated Systems, Department of Electrical EngineeringStanford UniversityStanfordUSA

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