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p-type Channel Field-Effect Transistors

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Fundamentals of III-V Semiconductor MOSFETs

Abstract

Development of p-type MOSFETs using new materials is an important goal to provide a further scaling of CMOS circuits. Although bulk transport properties of Ge make it the main candidate for p-channel, strained III-As and, in particular, III-Sb are good competitors in particular for deeply scaled devices due to lower hole effective mass in strained InSb heterostructures, simplicity of band engineering with variety of material choices to create high barriers, reduce leakage, improve ohmic contacts, etc. The chapter begins with physics of scattering in bulk semiconductors, describes how the MOSFETs figures-of-merit change with scaling, reviews physics of strain effects in quantum wells with the emphasis on effective mass, density of states and mobility. Technologies and results on p-channel heterojunction field-effect transistors and MOSFETs are reviewed.

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Acknowledgement

The work was supported by the Focus Center Research Program (FCRP) through the center for Materials, Structures, and Devices (MSD).

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    Serge Oktyabrsky

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    Peide Ye

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Oktyabrsky, S. (2010). p-type Channel Field-Effect Transistors. In: Oktyabrsky, S., Ye, P. (eds) Fundamentals of III-V Semiconductor MOSFETs. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-1547-4_12

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