Skip to main content

Transistors

  • Chapter
  • First Online:
Technology of Quantum Devices

Abstract

Modern semiconductor electronics was revolutionized by the invention of the bipolar transistor at the Bell Telephone Laboratories in 1948. The impact of transistors can be best understood when one realizes that, without them, there would have been no progress in such diverse areas of everyday life as computers, television, telecommunications, the Internet, air travel, space exploration, as well as the tools necessary to study and understand the biological process.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 219.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 279.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 279.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  • Alexandre, F., Benchimol, J.L., Dangla, J., Dubon-Chevallier, C., and Amarger, V., “Heavily doped based GaInP/GaAs heterojunction bipolar-transistor grown by chemical beam epitaxy,” Electronics Letters. 26, pp. 1753-1755, 1990.

    Article  Google Scholar 

  • Ashizawa, Y., Noda, T., Morizuka, K., Asaka, M., and Obara, M., “LPMOCVD growth of C-doped GaAs-layers and AlGaAs/GaAs heterojunction bipolar-transistors,” Journal of Crystal Growth 107, pp. 903-908, 1991.

    Article  CAS  Google Scholar 

  • Bachem, K.H., Lauterbach, Th., Maier, M., Pletschen, W., and Winkler, K., “MOVPE growth, technology and characterization of Ga0.5In0.5P/GaAs heterojunction bipolar-transistors,” Gallium Arsenide and Related Compounds (Institute of Physics Conference Series 120), ed. G.B. Stringfellow, Institute of Physics, Bristol, pp. 293-298, 1992.

    Google Scholar 

  • Biswas, D., Debhar, N., Bhattacharya, P., Razeghi, M., Defour, M., and Omnes, F., “Conduction-band and valence-band offsets in GaAs/Ga0.51In0.49P single quantum-wells grown by metalorganic chemical vapor-deposition,” Applied Physics Letters 56, pp. 833-835, 1990.

    Article  CAS  Google Scholar 

  • Chang, M.F., Asbeck, P.M., Wang, K.C., Sullivan, C.J., Sheng, N.H., Higgins J.A., and Miller, D.L., “AlGaAs/GaAs heterojunction bipolar-transistors fabricated using a self-aligned dual lift-off process,” IEEE Electron Device Letters 8, pp. 303-305, 1987.

    Article  Google Scholar 

  • Das, A. and Lundstrom, M.S., “Numerical study of emitter-base junction design for AlGaAs GaAs heterojunction bipolar-transistors,” IEEE Transactions on Electron Devices 35, pp. 863-870, 1988.

    Article  Google Scholar 

  • Enquist, P.M. and Hutchby, J.A., “High-frequency performance of MOVPE npn AlGaAs/GaAs heterojunction bipolar-transistors,” Electronics Letters 25, pp. 1124-1125, 1989.

    Article  Google Scholar 

  • Ginoudi, A., Paloura, E.C., Kostandinidis, G., Kiriakidis, G., Maurel, Ph., Garcia, J.C., and Christou, A., “Low-temperature DC characteristics of S-doped and Si-doped Ga0.51In0.49P/GaAs high electron-mobility transistors grown by metalorganic molecular-beam epitaxy,” Applied Physics Letters 60, pp. 3162-3164, 1992.

    Article  CAS  Google Scholar 

  • Hayama, N., Okamoto, A., Madihian, M., and Honjo, K., “Submicrometer fully self-aligned AlGaAs/GaAs heterojunction bipolar-transistor,” IEEE Electron Devices Letters 8, pp. 246-248, 1987.

    Article  Google Scholar 

  • Kobayashi, T., Taira, K., Nakamura, F., and Kawai, H., “Band lineup for a GaInP/GaAs heterojunction measured by high-gain npn heterojunction bipolar-transistor grown by metalorganic chemical vapor-deposition,” Journal of Applied Physics 65, pp. 4898-4902, 1989.

    Article  CAS  Google Scholar 

  • Kuech, T.F., Wang, P.J., Tischler, M.A., Potenski, R., Scilla, G.J., and Cardone, F., “The control and modeling of doping profiles and transients in MOVPE growth,” Journal of Crystal Growth 93, pp. 624-630, 1988.

    Article  CAS  Google Scholar 

  • Landgren, G., Rask, M., Anderson, S.G., and Lundberg, A., “Abrupt Mg doping profiles in GaAs grown by metalorganic vapor-phase epitaxy,” Journal of Crystal Growth 93, pp. 646-649, 1988.

    Article  CAS  Google Scholar 

  • Mondry, M.J. and Kroemer, H., “Heterojunction bipolar-transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular-beam epitaxy,” IEEE Electron Device Letters 6, pp. 175-177, 1985.

    Article  Google Scholar 

  • Nagata, K., Nakajima, O., Nittono, T., Ito, H., and Ishibashi, T., “Self-aligned AlGaAs/GaAs HBT with InGaAs emitter cap layer,” Electronics Letters 23, pp. 64-65, 1987.

    Article  Google Scholar 

  • Razeghi, M., Omnes, F., Defour, M., Maurel, Ph., Hu, J., Wolk, E., and Pavlidis, D., “High-performance GaAs GaInP heterostructure bipolar-transistors grown by low-pressure metalorganic-chemical vapor-deposition,” Semiconductor Science and Technology 5, pp. 278-280, 1990.

    Article  CAS  Google Scholar 

  • Razeghi, M., The MOCVD Challenge Volume 2: A Survey of GaInAsP-GaAs for photonic and electronic device applications, Institute of Physics, Bristol, UK, 1995.

    Google Scholar 

  • Seeger, K., Semiconductor Physics: An Introduction, Springer-Verlag, New York, 1997.

    Google Scholar 

  • Twynam, J.K., Sato, H., and Kinosada, T., “High-performance carbon-doped base GaAs AlGaAs heterojunction bipolar-transistor grown by MOCVD,” Electronics Letters 27, pp. 141-142, 1991.

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

Copyright information

© 2010 Springer Science+Business Media, LLC

About this chapter

Cite this chapter

Razeghi, M. (2010). Transistors. In: Technology of Quantum Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-1056-1_5

Download citation

Publish with us

Policies and ethics