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Device Physics of Narrow Gap Semiconductors pp 283–339Cite as

Superlattice and Quantum Well

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Part of the book series: Microdevices ((MDPF))

Abstract

In three-dimensional crystals, the band edge carrier motion can be described by a quasi-particle model. The interaction of the particle with the periodic crystal field is included in the effective mass, m  ∗ . To first order, the electrons in the conduction band of a crystal with inversion symmetry have m  ∗  independent of crystal direction, and the quasi-particle energy, E 3D, is in an isotropic distribution in k-space,

$${E}^{3\mathrm{D}}(k) = \frac{{\hbar }^{2}} {2{m}^{{_\ast}}}({k}_{x}^{2} + {k}_{ y}^{2} + {k}_{ z}^{2}),$$
(5.1)

where k x , k y , k z denote the wave numbers in the x, y, z directions.

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  1. Shanghai Institute of Technical Physics, CAS, Shanghai, 200083, China

    Junhao Chu

  2. East China Normal University, Shanghai, 200241, China

    Junhao Chu

  3. SRI International, 333 Ravenswood Ave., Menlo Park, CA, 94025-3493, USA

    Arden Sher

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Chu, J., Sher, A. (2010). Superlattice and Quantum Well. In: Device Physics of Narrow Gap Semiconductors. Microdevices. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-1040-0_5

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