Abstract
The through-silicon via (TSV) is composed of a conductor, also named “nail” or “plug,” crossing the Si substrate of the stacked dies [1, 2], as shown in Fig. 3.1. The conductor [common material choices include copper (Cu), tungsten (W), and polysilicon] is electrically insulated from the substrate by a dielectric layer (usually SiO2) and interconnects the metal wires of the stacked dies.
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Stucchi, M., Katti, G., Velenis, D. (2011). TSV Characterization and Modeling. In: Papanikolaou, A., Soudris, D., Radojcic, R. (eds) Three Dimensional System Integration. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-0962-6_3
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