Abstract
This chapter presents an exhaustive analysis of resistive-open defects in the sense amplifiers of SRAMs. It shows that some resistive-open defects may lead to faulty behaviors that can be modeled by dynamic two-cell Incorrect Read Faults of two different types (d2cIRF1 and d2cIRF2). Such fault models represent failures in a sense amplifier that prevent it to perform any read operations (in case of d2cIRF1) or only a single type of read operation (either r0 or r1 in case of d2cIRF2). Results of electrical simulations, performed with a 65-nm SRAM technology, are reported to provide a complete understanding of such a faulty behavior. Finally, possible March test solutions are proposed to detect all d2cIRFs (type 1 and type 2) in SRAM sense amplifiers.
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Girard, P., Bosio, A., Dilillo, L., Pravossoudovitch, S., Virazel, A. (2010). Resistive-Open Defects in Sense Amplifiers. In: Advanced Test Methods for SRAMs. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-0938-1_6
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DOI: https://doi.org/10.1007/978-1-4419-0938-1_6
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Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4419-0937-4
Online ISBN: 978-1-4419-0938-1
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