Analytical Determination of the Radiation-induced Pulse Shape
In this chapter, an analytical model to efficiently estimate the shape of the voltage glitch that results from a radiation particle strike is presented. A model for the load current I out G (V in, V out) of the output terminal current of the gate G is used. The model presented in this chapter is applicable to any general combinational gate with different loading, and for arbitrary values of collected charge (Q). The effect of the ion track establishment constant (τβ) of the radiation particle induced current pulse is accounted for. The voltage glitch computed by this analytical model can be propagated to the primary outputs of a circuit using existing voltage glitch propagation tools. The properties of the voltage glitch (such as its magnitude, glitch shape, and width) at the primary outputs can be used to evaluate the SEE robustness of the circuit. On the basis of the result of this analysis, circuit hardening approaches can be implemented to achieve the level of radiation tolerance required. Experimental results demonstrate that the proposed analytical model is fast (at least 275 ×faster) and accurate (average root-mean-square-percentage error is 5%) compared with SPICE.
KeywordsAttenuation Propa Tempo
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