Abstract
We review in the present chapter the electronic and optical properties of hexagonal boron-nitride and hexagonal composite boron carbonitride planar and nanotubular structures. We focus mainly on theoretical aspects, but illustrate in all situations the link with existing experimental findings. In a first part, the insulating nature, and the band gap stability, of boron-nitride nanotubes are shown to be related to the ionicity character of the boron-nitrogen bond. Specific emphasis is given to the optical properties and the related excitonic effects. In a second part, the evolution of the stability and band gap of boron carbonitride systems as a function of the degree of segregation in pure carbon or boron-nitride domains is illustrated and their potential in terms of rectifying hetero-junctions, quantum dots, or visible-light optoelectronics devices is emphasized.
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Ackowledgments
X.B. acknowledges support from the French CNRS and National Agency for Research (ANR) under contract PNANO-ACCENT n° ANR-06-NANO-069-02. H.C. acknowledges support from the Brazilian agencies CNPq and FAPEMIG, and from the project Instituto do Milênio de Nanotecnologia/MCT.
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Blase, X., Chacham, H. (2009). Electronic Properties of Boron-Nitride and Boron Carbonitride Nanotubes and Related Heterojunctions. In: B-C-N Nanotubes and Related Nanostructures. Lecture Notes in Nanoscale Science and Technology, vol 6. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-0086-9_4
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