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Introduction

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Copper Interconnect Technology

The word interconnect (interconnection) in very large-scale integrated circuits (VLSIs) means a metal line of low resistivity (high conductivity) which connects the various electronic devices to carry current or to transport charge [1]. The interconnecting metal lines are separated from the substrate by insulating layers (dielectric material), except on the contact area. Since the creation of the integrated circuit (IC) in 1960, aluminum (Al) or its alloy (Al+Si+Cu) has become the primary material for interconnecting lines, and silicon dioxide (SiO2) has become the insulating layer (dielectric material) to separate the interconnects. Besides being an insulating material for interconnecting lines, SiO2 has been used also as a gate material in metal oxide semiconductor (MOS) devices. As a matter of fact, Al coupled with SiO2 has become the workhorse of IC technology.

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  1. Radiation Monitoring Devices, Inc., Watertown, MA, USA

    Tapan Gupta

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  1. Tapan Gupta
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© 2009 Springer Science+Business Media, LLC

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Gupta, T. (2009). Introduction. In: Copper Interconnect Technology. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-0076-0_1

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  • DOI: https://doi.org/10.1007/978-1-4419-0076-0_1

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