Abstract
In our presentation we overview progress we made in developing a new ultrashort and ultraintensive laser system based on Raman backscattering (RBS) amplifier /compressor from time of 10th XRL Conference in Berlin to present time of 11th XRL Conference in Belfast. One of the main objectives of RBS laser system development is to use it for pumping of recombination X-ray laser in transition to ground state of CVI ions at 3.4 nm. Using elaborate computer code the processes of Optical Field Ionization, electron energy distribution, and recombination were calculated. It was shown that in very earlier stage of recombination, when electron energy distribution is strongly non-Maxwellian, high gain in transition from the first excited level n=2 to ground level m=1 can be generated. Adding large amount of hydrogen gas into initial gas containing carbon atoms (e.g. methane, CH4) the calculated gain has reached values up to 150–200 cm−2 Taking into account this very encouraging result, we have proceed with arrangement of experimental setup. We will present the observation of plasma channels and measurements of electron density distribution required for generation of gain at 3.4 nm.
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Suckewer, S. et al. (2009). Toward Ultraintense Compact RBS Pump for Recombination 3.4 nm Laser via OFI. In: Lewis, C.L.S., Riley, D. (eds) X-Ray Lasers 2008. Springer Proceedings in Physics, vol 130. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-9924-3_20
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DOI: https://doi.org/10.1007/978-1-4020-9924-3_20
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