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Sensitivity of Zno Films Doped with Er, Ta and Co to NH3 at Room Temperature

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Nanostructured Materials for Advanced Technological Applications

The sensitivity of ZnO films, undoped and doped with Er, Ta and Co, to exposure to NH3 has been studied. The films were deposited by magnetron co-sputtering of a sintered ZnO target with chips of the different doping elements on its surface. The sensitivities of the ZnO films to NH3 exposure were measured by the quartz crystal microbalance method using the resonance frequency shift. The sorption process was investigated over an aqueous solution of ammonia with a concentration of 100 ppm. The speed and the mass of sorption were calculated on the basis of the time — frequency characteristic.

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Correspondence to H. Nichev .

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Nichev, H., Dimova-Malinovska, D., Georgieva, V., Angelov, O., Pivin, J.C., Mikli, V. (2009). Sensitivity of Zno Films Doped with Er, Ta and Co to NH3 at Room Temperature. In: Reithmaier, J.P., Petkov, P., Kulisch, W., Popov, C. (eds) Nanostructured Materials for Advanced Technological Applications. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-9916-8_32

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