The process of aluminium-induced crystallization (AIC) has attracted increasing scientific interest in the last decade, because of the possible application of the resulting poly-Si films in different devices, e.g. solar cells, thin film transistors (TFTs), image sensors, bio-application, etc. In the present paper, a study of the influence of the precursor layers — the interfacial oxide layer formed by different methods, and a-Si:H — on the structural properties of poly-Si films prepared by AIC is presented. The influence of the temperature of deposition and the hydrogen content in the a-Si:H precursor layers and the optical and structural properties of the obtained poly-Si films are presented as well.
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Dimova-Malinovska, D. (2009). Influence Of The Precursor Materials On The Structural Properties Of Poly-Si Thin Films Obtained By Aluminium-Induced Crystallization. In: Reithmaier, J.P., Petkov, P., Kulisch, W., Popov, C. (eds) Nanostructured Materials for Advanced Technological Applications. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-9916-8_30
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