Abstract
A multitude of industries use H2 either as part of their process or as a fuel. All these applications motivate nowadays the development of hydrogen sensor devices which enable its safe and controlled use. Since H2 is explosive above the lower explosion limit at 40,000 ppm, devices which permit the detection of its presence and measure its concentration become indispensable. In this work, we present a microsensor based on NiO thin films produced with dc reactive magnetron sputtering on GaAs, with an incorporated Pt heater, all on a DO-8 package ready for use. The microsensor was tested to H2 concentrations 5,000 and 10,000 ppm at different working temperatures. The change of the electrical resistance of NiO thin films was the signal for hydrogen sensing. The response of the sensor was not proportional to concentration of the gas neither to the working temperature.
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Fasaki, I. et al. (2008). Hydrogen Microsensor Based on NiO Thin Films. In: Vaseashta, A., Mihailescu, I.N. (eds) Functionalized Nanoscale Materials, Devices and Systems. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8903-9_35
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DOI: https://doi.org/10.1007/978-1-4020-8903-9_35
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-8902-2
Online ISBN: 978-1-4020-8903-9
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