The sensing mechanism and the response simulation of the MIS hydrogen sensor
The Pd0.96Cr0.04alloy gated metal-insulator-semiconductor (MIS) hydrogen sensor has been studied. A new sensing mechanism is proposed that the sensor response is related to the protons. The capacitance-voltage (CV) curve, conductance-voltage (GV) curve, and the sensor response are simulated.
KeywordsCarbide Explosive Nitride
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