The sensing mechanism and the response simulation of the MIS hydrogen sensor
The Pd0.96Cr0.04alloy gated metal-insulator-semiconductor (MIS) hydrogen sensor has been studied. A new sensing mechanism is proposed that the sensor response is related to the protons. The capacitance-voltage (CV) curve, conductance-voltage (GV) curve, and the sensor response are simulated.
KeywordsBias Voltage Sensor Response Aluminum Nitride Response Simulation Hydrogen Sensor
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- L. Zhang, E. F. McCullen, et al., "Response to Hydrogen of a metal/AlN/Si thin film structure: effects of composition and structure of a combination Pd-Cr gate," Sensors and Actuators B-Chemical, vol. 113(2), pp. 843-851, 2006.Google Scholar
- E.F. McCullen, et al., “Electrical characterization of metal/AlN/Si thin film hydrogen sensors with Pd and Al gates,” Journal of Applied Physics, vol. 93(9), pp. 5757-5762, 2003.Google Scholar
- Zhang, Linfeng, Ph.D. Dissertation, Wayne State University, 2006Google Scholar