The sensing mechanism and the response simulation of the MIS hydrogen sensor

  • Linfeng Zhang
  • Erik McCullen
  • Lajos Rimai
  • K. Y. Simon Ng
  • Ratna Naik
  • Gregory Auner

Abstract

The Pd0.96Cr0.04alloy gated metal-insulator-semiconductor (MIS) hydrogen sensor has been studied. A new sensing mechanism is proposed that the sensor response is related to the protons. The capacitance-voltage (CV) curve, conductance-voltage (GV) curve, and the sensor response are simulated.

Keywords

Carbide Explosive Nitride 

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References

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Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • Linfeng Zhang
    • 1
  • Erik McCullen
    • 2
  • Lajos Rimai
    • 2
  • K. Y. Simon Ng
    • 3
  • Ratna Naik
    • 4
  • Gregory Auner
    • 1
  1. 1.Department of Electrical EngineeringUniversity of BridgeportBridgeport CT 06604
  2. 2.Department of Electrical and Computer Engineering Wayne State UniversityDetroit MI 48202
  3. 3.Department of Chemical Engineering and Material Science Wayne State UniversityDetroit MI 48202
  4. 4.Department of Physics and AstronomyWayne State UniversityDetroit, MI 48202

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