Controlled Band Gap Modulation of Hydrogenated Dilute Nitrides by SEM-Cathodoluminescence
Hydrogen is known to passivate nitrogen in dilute nitrides, such as Ga(AsN) and Ga(PN). By focusing an electron beam on the surface of hydrogenated GaAs1−xNx/GaAs (GaP1−yNy/GaP) we remove hydrogen atoms from their passivation sites, thus leading to a controlled decrease of the crystal band gap in the spatial region where the e-beam is steered. The area designated by the electron beam acts in all respects as a potential well for carriers. Cycling the samples several times between T=5 K and room temperature, the same CL images and spectra were recorded thus demonstrating the thermal stability of the H displacement process. The 100% pre hydrogenation conditions are achieved after 30–40 sec of irradiation at T=5 K.
KeywordsElectron Beam Electron Beam Irradiation Hydrogenate Dilute Solid Source Molecular Beam Epitaxy Passivation Site
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- 2.Weisbuch C and Vinter B 1991 Quantum Semiconductor Structures (Academic Press, San Diego, USA)Google Scholar
- 4.Bimberg D, Grundmann M and Ledentsov N N 1998 Quantum Dot Heterostructures (Wiley, Chichester, UK)Google Scholar
- 7.Physics and Applications of Dilute Nitrides, Eds I A Buyanova and W M Chen, 2004 (Taylor & Francis, New York, USA)Google Scholar