Analytical STEM Comparative Study of the Incorporation of Covalent (Ge) or Heterovalent (As) Atoms in Silicon Crystal
In this paper we use STEM analytical techniques to compare the incorporation of Ge and As atoms in silicon. First we show that STEM EDX, EELS and HAADF imaging can give 2D quantitative mapping with nanometre resolution and 1019 cm−3 detection limit. In parallel STEM CBED can give locally the lattice parameter change induced by the incorporated atoms. As expected we found that in SiGe alloys the lattice parameter increases. On the contrary and surprisingly inside highly As doped silicon areas the lattice parameter decreases. This could be due to the interaction or clustering of arsenic vacancies.
KeywordsElectron Energy Loss Spectroscopy Convergent Electron Beam Diffraction Analytical Stem Electron Energy Loss Spectroscopy Spectrum Lattice Parameter Change
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