Summary
Well-aligned single crystalline GaN nanowires were epitaxially grown on Al2O3 by molecular beam epitaxy. Controlled growth of the nanowires is achieved by tuning the V/III ratio during growth. Oxidised single crystalline catalyst droplets of a cubic symmetry are observed on the top surface of the nanowires. Adaptation of the cubic lattice on the wurtzite tip is realized via the introduction of a dense network of misfit dislocations at the interface. The {100} lattice spacing of the oxide droplets is found to be very close to its strain-free value, indicating almost full relaxation by the misfit dislocation network.
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Kehagias, T. et al. (2008). Epitaxial Growth of Single Crystalline GaN Nanowires on (0001) Al2O3 . In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_49
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DOI: https://doi.org/10.1007/978-1-4020-8615-1_49
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