Electron Microscopy Analysis of AlGaN/GaN Nanowires Grown by Catalyst-Assisted Molecular Beam Epitaxy

  • L Lari
  • R T Murray
  • M Gass
  • T J Bullough
  • P R Chalker
  • C Chèze
  • L Geelhaar
  • H Riechert
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Summary

Scanning transmission electron microscopy has been used to investigate the composition of nickel seeds which promote the columnar growth of AlGaN / GaN nanowires deposited by molecular beam epitaxy (MBE) on sapphire. The nickel distribution along the nanowires was investigated by both X-ray and electron-energy-loss spectroscopy. Gallium was observed in nickel seeds at the nanowires growth tips. No aluminium was detected and a minimal presence of nitrogen was observed in the nickel seeds, which exhibit a nickel oxide surface attributed to oxidation following removal from the MBE growth system.

Keywords

Nickel Nitride Gallium Sapphire Nash 

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Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • L Lari
    • 1
  • R T Murray
    • 1
  • M Gass
    • 2
  • T J Bullough
    • 1
  • P R Chalker
    • 1
  • C Chèze
    • 3
  • L Geelhaar
    • 3
  • H Riechert
    • 3
  1. 1.Department of EngineeringUniversity of LiverpoolLiverpoolUK
  2. 2.SuperSTEM LaboratoryCLRC DaresburyDaresburyUK
  3. 3.Qimonda, D-81730, Munich and NaMLabDresdenGermany

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