Summary
Thin layers of diluted magnetic semiconductors, based on germanium supersaturated with manganese grown on GaAs substrates, were studied by XPS and AES. XPS measurements reveal the change of line shapes for germanium, manganese and oxygen in surface layers in comparison with deeper layers as a transition from the oxidized form for germanium and manganese on and near the surface to the unoxidized state in deeper layers. XPS spectra of valence electrons indicate that the density of states in the valence band of the Ge:Mn ferromagnetic structures does not correspond to a mechanical mixture of germanium and manganese.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Zhou X H, Chen X S, Guo X G, Sun L Z, Sun Y L and Lu W 2004 J. Magn. Magnetic Mater. 284, 353
Demidov E S, Danilov Yu A, Podolskii V V, Lesnikov V P, Sapozhnikov M V and Suchkov A 2006 JETP Lett. 83, N12, 568
Danilov Yu A, Demidov E S, Drozdov Yu N, Lesnikov V P and Podol'ski V V 2005 Semiconductors 39, 4
Digital Database of XPS Spectra, XPS International, www.xpsdata.com
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2008 Springer Science+Business Media B.V.
About this paper
Cite this paper
Danilov, Y.A. et al. (2008). Analysis of Ge:Mn Magnetic Semiconductor Layers by XPS and Auger Electron Spectroscopy/Microscopy. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_28
Download citation
DOI: https://doi.org/10.1007/978-1-4020-8615-1_28
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-8614-4
Online ISBN: 978-1-4020-8615-1
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)