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Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si

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Microscopy of Semiconducting Materials 2007

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 120))

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Summary

Fully epitaxial germanium-on-insulator structures have been grown for the first time on (001) Si substrates by using a perovskite oxide template. Detailed transmission electron microscopy analysis revealed that a two-temperature growth procedure is required in order to avoid three-dimensional island growth and to obtain continuous and flat Ge films. The interface between the oxide and Ge is fully crystalline and atomically sharp. A high density of stacking faults and twin structures has been found preferentially originating from the surface roughness of the oxide.

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Author information

Authors and Affiliations

  1. Institute of Physics of Complex Matter, Ecole Polytechnique Fédérale de Lausanne, Lausanne, CH-1015, Switzerland

    Ch Dieker & J W Seo

  2. Zurich Research Laboratory, IBM Research GmbH, Rüschlikon, CH-8803, Switzerland

    A Guiller, M Sousa, J-P Locquet & J Fompeyrine

  3. National Center for Scientific Research Demokritos, Athens, 153 10, Greece

    Y Panayiotatos, A Sotiropoulos, K Argyropoulos & A Dimoulas

Authors
  1. Ch Dieker
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  2. J W Seo
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  3. A Guiller
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  4. M Sousa
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  5. J-P Locquet
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  6. J Fompeyrine
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  7. Y Panayiotatos
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  8. A Sotiropoulos
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  9. K Argyropoulos
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  10. A Dimoulas
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Editor information

Editors and Affiliations

  1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

    A. G. Cullis

  2. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK

    P. A. Midgley

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© 2008 Springer Science+Business Media B.V.

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Dieker, C. et al. (2008). Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_27

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