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Investigation of the Local Ge Concentration in Si/SiGe Multi-QW Structures by CBED Analysis and FEM Calculations

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Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 120))

Summary

The local Ge concentration in Si/SiGe multiquantum well structures was investigated by CBED analysis. Series of bright field CBED patterns were taken across the quantum wells using the [340]-zone axis in STEM mode. The HOLZ lines in these patterns were fitted with the JEMS program [1] in order to deduce the local lattice parameters. With finite-element calculations taking the plastic relaxation of the thin TEM foil into account the Ge concentrations corresponding to these sets of lattice parameters were determined.

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References

  1. Electron Microscopy Software Java version (JEMS), P. Stadelmann, EFP Lausanne, Switzerland

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Ruh, E., Mussler, G., Müller, E., Grützmacher, D. (2008). Investigation of the Local Ge Concentration in Si/SiGe Multi-QW Structures by CBED Analysis and FEM Calculations. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_25

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