Nitrogen-Enhanced Indium Segregation in (Ga,In)(N,As)/GaAs Multiple Quantum Wells

  • E Luna
  • A Trampert
  • E-M Pavelescu
  • M Pessa
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Summary

Transmission electron microscopy (TEM) is used to determine the composition of quaternary (Ga,In)(N,As) quantum wells (QWs). Through a combined analysis of the chemically sensitive (002) dark-field images and lattice-resolving high-resolution TEM images, the local distributions of nitrogen and indium in the growth direction are determined. In particular, we were able to directly detect the existence of indium segregation in (Ga,In)(N,As) QWs. A comparison with the indium distribution profile in the nitrogen-free (In,Ga)As QWs, grown under similar conditions, revealed that incorporating N into the alloy enhanced indium segregation.

Keywords

Milling GaAs Nitrides Doyle 

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Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • E Luna
    • 1
  • A Trampert
    • 1
  • E-M Pavelescu
    • 1
    • 2
  • M Pessa
    • 1
    • 2
  1. 1.Paul-Drude Institute for Solid State ElectronicsBerlinGermany
  2. 2.ORC, Tampere University of TechnologyTampereFinland

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