The fabrication of nanopores on GaN substrates using the simple and economical technique of microsphere lithography is demonstrated. A self-assembled hexagonal microsphere array formed on GaN substrate acts as a hard-mask for the fabrication of nanostructures. In subsequent dry etch processes, arrays of holes in a nanostructure were formed on top of the LED. The structural properties of the nanopores are characterized by scanning electron microscopy (SEM), while photoluminescence (PL) measurements showed a 25% enhancement of light emission intensity, attributed to improved light extraction.
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Barnard, J., Beyer, Y. (2008). On the Nature of Eu in Eu-Doped GaN. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_20
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