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Quantitative Analysis of Deformation Around a Nanoindentation in GaN by STEM Diffraction

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Book cover Microscopy of Semiconducting Materials 2007

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 120))

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Summary

The lattice rotations underneath a nanoindentation in GaN are measured from the energy-filtered convergent beam electron diffraction patterns generated by scanning transmission electron microscopy (STEM). These rotations reveal a kink band not visible in STEM high angle annular dark field images. Furthermore, the diffraction data allows the lowest-energy configuration of dislocations associated with the kink band rotations to be estimated.

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Author information

Authors and Affiliations

  1. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, Cambridge CB2 3QZ, UK

    K K McLaughlin & W J Clegg

Authors
  1. K K McLaughlin
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  2. W J Clegg
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Editor information

Editors and Affiliations

  1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

    A. G. Cullis

  2. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK

    P. A. Midgley

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© 2008 Springer Science+Business Media B.V.

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McLaughlin, K., Clegg, W. (2008). Quantitative Analysis of Deformation Around a Nanoindentation in GaN by STEM Diffraction. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_17

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