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Composite Substrates for GaN Growth

  • B Pécz
  • L Tóth
  • L Dobos
  • P Bove
  • H Lahrèche
  • R Langer
Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Summary

This work reports on the development of composite substrates, realised using the Smart Cut™ technology. A thin film of monocrystalline SiC or Si is transferred onto polycrystalline SiC. Those composite substrates can be prepared for 4” size and over as well. GaN layers are grown onto the above substrates in order to demonstrate that they can be used for the fabrication of GaN high electron mobility transistor (HEMT) devices. The epitaxial nitride layers have been grown successfully and exhibit state of the art GaN HEMTs grown on silicon in terms of crystal and electrical properties.

Keywords

Atomic Force Microscopy Nitride Layer High Electron Mobility Transistor Wafer Bonding Composite Substrate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    Celler G K and Cristoloveanu S 2003 J. Appl. Phys. 93, 4955CrossRefADSGoogle Scholar
  2. 2.
    Barna A, Radnóczi G and Pécz B 1997 Handbook of Microscopy, (eds. S. Amelinckx, D. van Dyck, J. van Landuyt, G. van Tendelo) VCH Verlag, Vol. 3, Chapter II/3Google Scholar
  3. 3.
    Barna A, Pécz B and Menyhard M 1998 Ultramicroscopy 70, 161CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media B.V. 2008

Authors and Affiliations

  • B Pécz
    • 1
  • L Tóth
    • 1
  • L Dobos
    • 1
  • P Bove
    • 2
  • H Lahrèche
    • 2
  • R Langer
    • 2
  1. 1.Research Institute for Technical Physics and Materials ScienceHungarian Academy of SciencesBremenHungary
  2. 2.Picogiga International SASPlace Marcel RebuffatFrance

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