Composite Substrates for GaN Growth
This work reports on the development of composite substrates, realised using the Smart Cut™ technology. A thin film of monocrystalline SiC or Si is transferred onto polycrystalline SiC. Those composite substrates can be prepared for 4” size and over as well. GaN layers are grown onto the above substrates in order to demonstrate that they can be used for the fabrication of GaN high electron mobility transistor (HEMT) devices. The epitaxial nitride layers have been grown successfully and exhibit state of the art GaN HEMTs grown on silicon in terms of crystal and electrical properties.
KeywordsAtomic Force Microscopy Nitride Layer High Electron Mobility Transistor Wafer Bonding Composite Substrate
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