Bsim To Ekv Conversion

Part of the Analog Circuits and Signal Processing book series (ACSP)

The BSIM2EKV converter has been developed as a stand-alone application that works in interaction with an external simulator. It makes it possible to extract the parameters of the EKV model from the parameters of the BSIM model using the algorithm based on standard EKV model parameters' extraction procedure and the simulated transistor characteristics. This chapter provides the details on BSIM to EKV conversion procedure, and presents the developed tool.


PMOS Transistor Strong Inversion Weak Inversion Conversion Algorithm Drain Induce Barrier Lowering 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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  1. 1.
    D. Stefanović, M. Kayal, M. Pastre, V. Litovski, “Procedural analog design (PAD) tool”, Fourth International Symposium on Quality Electronic Design, pp. 313–318, March 2003Google Scholar
  2. 2.
    D. Stefanović, M. Kayal, M. Pastre,”PAD: A new interactive knowledge based analog design approach”, Analog Integrated Circuits and Signal Processing Journal, Volume 42, pp. 291–299, March 2005CrossRefGoogle Scholar
  3. 3.
    D. Foty, M. Bucher, “Re-interpreting the MOS transistor via the inversion coefficient and the continuum of gms/Id”, International Conference on Electronics, Circuits and Systems, Volume 3, pp. 1179– 1182, September 2002Google Scholar
  4. 4.
    M. Bucher, D. Kazazis, F. Krummenacher, D. Binkley, D. Foty, Y. Papananos, “Analysis of transconductances at all levels of inversion in deep submicron CMOS”, International Conference on Electronics, Circuits and Systems, Volume 3, pp. 1183–1186, September 2002Google Scholar
  5. 5.
    F. Silveira, D. Flandre, P. G. A. Jespers, “A gm/ID based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA”, IEEE Journal of Solid-State Circuits, Volume 31, pp. 1314–1319, September 1996CrossRefGoogle Scholar
  6. 6.
    D. Flandre, A. Viviani, J.-P. Eggermont, B. Gentinne, P. G. A. Jespers, “Improved synthesis of gain-boosted regulated–cascode CMOS stages using symbolic analysis and gm/ID methodology”, IEEE Journal of Solid-State Circuits, Volume 32, pp. 1006–1012, July 1997CrossRefGoogle Scholar
  7. 7.
    D. Binkley, M. Bucher, D. Foty, “Design-oriented characterization of CMOS over the continuum of inversion level and channel length”, IEEE International Conference on Electronics, Circuits and Systems, pp. 161– 164, December 2000Google Scholar
  8. 8.
    M. Bucher, C. Lallement, C. C. Enz, “An efficient parameter extraction methodology for the EKV MOST model”, IEEE International Conference on Microelectronic Test Structures, pp. 145–150, March 1996Google Scholar
  9. 9.
    M. Bucher, Analytical MOS Transistor Modelling for Analog Circuit Simulation, PhD thesis N°2114, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland, 1999Google Scholar
  10. 10.
    P. Bendix, “Detailed comparison of the SP2001, EKV, and BSIM3 models”, Technical Proceedings of the 2002 International Conference on Modelling and Simulation of Microsystems, Nanotech 2002, Volume 1, pp. 649–652Google Scholar
  11. 11.
    S. C. Terry, J. M. Rochelle, D. M. Binkley, B. J. Blalock, D. P. Foty, M. Bucher, “Comparison of a BSIM3V3 and EKV MOSFET model for a 0.5 μm CMOS process and implications for analog circuit design”, IEEE Transactions on Nuclear Science, Volume 50, August 2003Google Scholar
  12. 12.
    D. Stefanović, F. Krummenacher, M. Pastre, M. Kayal, “BSIM2EKV: un outil pour la conversion automatique des paramètres du modèle BSIM aux paramètres du modèle EKV”, TAISA'04 5ème Colloque sur le Traitement Analogique de l'Information, du Signal et ses Applications, pp. 85–88, Septembre 2004Google Scholar
  13. 13.
    D. Stefanović, F. Krummenacher, M. Paste, M. Kayal, “BSIM2EKV: BSIM3.3 to EKV 2.6 model library file automatic conversion”, EKV Users' Meeting/Workshop, November 2004Google Scholar
  14. 14.
    G. Ghibaudo, “New method for the extraction of MOSFET parameters”, Electronics Letters, Volume 24, pp. 543, 1998CrossRefGoogle Scholar
  15. 15.
    HP IC-CAP Modelling Software, “User's Guide”, chapter 7, Hewlett-Packard, 1997Google Scholar

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