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Anomalous Spin Splitting of Electrons in InSb Type-II Quantum Dots in an InAs Matrix

  • Ya. V. Terent’ev
  • O. G. Lyublinskaya
  • A. A. Toropov
  • B. Ya. Meltser
  • A. N. Semenov
  • S. V. Ivanov
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

Magnetooptical studies of InSb type-II quantum dots (QDs) grown by molecular beam epitaxy (MBE) in an InAs matrix have been done. Unusual behaviour of photoluminescence from QDs measured in Faraday geometry was observed in the samples with multiple sheets of QDs. In particular, the σ-polarized peak originating from optical transitions of electrons with s=+1/2 has higher energy than the σ+ peak which corresponds to s=−1/2 that contradicts negative value of electronic g factor in InAs and InSb. We explain the effect in terms of competition of two channels of radiative recombination. They differ in initial electronic states that are attributed to electrons localized by InSb QDs and shallow donors in an InAs matrix.

Keywords

Molecular Beam Epitaxy Shallow Donor Molecular Beam Epitaxy Growth Faraday Geometry Initial Electronic State 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    Terent’ev, Ya.V. et al:. ‘InAs diode heterostructure as an effective electron spin aligner’, Program of 28 th Int. Conf. on the Phys. of Semicond., Vienna, 359, 2006Google Scholar
  2. 2.
    Ivanov, S. V. et al. : ‘Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers’, J. Cryst. Growth, 278, 72, 2005CrossRefADSGoogle Scholar

Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • Ya. V. Terent’ev
    • 1
  • O. G. Lyublinskaya
    • 1
  • A. A. Toropov
    • 1
  • B. Ya. Meltser
    • 1
  • A. N. Semenov
    • 1
  • S. V. Ivanov
    • 1
  1. 1.Ioffe Physico-Technical InstituteSt. PetersburgRussia

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