Skip to main content
SpringerLink
Log in
Book cover

Narrow Gap Semiconductors 2007 pp 31–33Cite as

Anomalous Spin Splitting of Electrons in InSb Type-II Quantum Dots in an InAs Matrix

  • Conference paper

  • 1044 Accesses

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 119))

Abstract

Magnetooptical studies of InSb type-II quantum dots (QDs) grown by molecular beam epitaxy (MBE) in an InAs matrix have been done. Unusual behaviour of photoluminescence from QDs measured in Faraday geometry was observed in the samples with multiple sheets of QDs. In particular, the σ-polarized peak originating from optical transitions of electrons with s=+1/2 has higher energy than the σ+ peak which corresponds to s=−1/2 that contradicts negative value of electronic g factor in InAs and InSb. We explain the effect in terms of competition of two channels of radiative recombination. They differ in initial electronic states that are attributed to electrons localized by InSb QDs and shallow donors in an InAs matrix.

This is a preview of subscription content, log in via an institution.

Chapter
USD   29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD   129.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Hardcover Book
USD   169.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Learn about institutional subscriptions

References

  1. Terent’ev, Ya.V. et al:. ‘InAs diode heterostructure as an effective electron spin aligner’, Program of 28 th Int. Conf. on the Phys. of Semicond., Vienna, 359, 2006

    Google Scholar 

  2. Ivanov, S. V. et al. : ‘Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers’, J. Cryst. Growth, 278, 72, 2005

    Article  ADS  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ioffe Physico-Technical Institute, St. Petersburg, 194021, Russia

    Ya. V. Terent’ev, O. G. Lyublinskaya, A. A. Toropov, B. Ya. Meltser, A. N. Semenov & S. V. Ivanov

Authors
  1. Ya. V. Terent’ev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. O. G. Lyublinskaya
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. A. Toropov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. B. Ya. Meltser
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. N. Semenov
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. S. V. Ivanov
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, GU2 7XH, UK

    Ben Murdin  & Steve Clowes  & 

Rights and permissions

Reprints and permissions

Copyright information

© 2008 Springer Science+Business Media B.V

About this paper

Cite this paper

Terent’ev, Y.V., Lyublinskaya, O.G., Toropov, A.A., Meltser, B.Y., Semenov, A.N., Ivanov, S.V. (2008). Anomalous Spin Splitting of Electrons in InSb Type-II Quantum Dots in an InAs Matrix. In: Murdin, B., Clowes, S. (eds) Narrow Gap Semiconductors 2007. Springer Proceedings in Physics, vol 119. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8425-6_8

Download citation

Publish with us

Policies and ethics

Search

Navigation