Anomalous Spin Splitting of Electrons in InSb Type-II Quantum Dots in an InAs Matrix
Magnetooptical studies of InSb type-II quantum dots (QDs) grown by molecular beam epitaxy (MBE) in an InAs matrix have been done. Unusual behaviour of photoluminescence from QDs measured in Faraday geometry was observed in the samples with multiple sheets of QDs. In particular, the σ-polarized peak originating from optical transitions of electrons with s=+1/2 has higher energy than the σ+ peak which corresponds to s=−1/2 that contradicts negative value of electronic g factor in InAs and InSb. We explain the effect in terms of competition of two channels of radiative recombination. They differ in initial electronic states that are attributed to electrons localized by InSb QDs and shallow donors in an InAs matrix.
KeywordsMolecular Beam Epitaxy Shallow Donor Molecular Beam Epitaxy Growth Faraday Geometry Initial Electronic State
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