Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSb Heterostructures
Relatively thick, ferromagnetic (In,Mn)As layers of up to around 150 nm with Curie temperature of T c = 35 K were prepared successfully by molecular beam epitaxy. Dependencies of (In,Mn)As and GaSb layer thicknesses on electrical conduction in the (In,Mn)As/GaSb were studied experimentally to discuss the evidence of hole transfer from p-(In,Mn)As to adjacent GaSb.
KeywordsCurie Temperature Molecular Beam Epitaxy Perpendicular Magnetic Anisotropy Anomalous Hall Effect RHEED Pattern
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