Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSb Heterostructures

  • H. Nose
  • S. Sugahara
  • H. Munekata
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)


Relatively thick, ferromagnetic (In,Mn)As layers of up to around 150 nm with Curie temperature of T c = 35 K were prepared successfully by molecular beam epitaxy. Dependencies of (In,Mn)As and GaSb layer thicknesses on electrical conduction in the (In,Mn)As/GaSb were studied experimentally to discuss the evidence of hole transfer from p-(In,Mn)As to adjacent GaSb.


Curie Temperature Molecular Beam Epitaxy Perpendicular Magnetic Anisotropy Anomalous Hall Effect RHEED Pattern 
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© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • H. Nose
    • 1
  • S. Sugahara
    • 1
  • H. Munekata
    • 1
  1. 1.Imaging Science and Engineering LaboratoryTokyo Institute of TechnologyYokohamaJapan

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