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Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSb Heterostructures

  • H. Nose
  • S. Sugahara
  • H. Munekata
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

Relatively thick, ferromagnetic (In,Mn)As layers of up to around 150 nm with Curie temperature of T c = 35 K were prepared successfully by molecular beam epitaxy. Dependencies of (In,Mn)As and GaSb layer thicknesses on electrical conduction in the (In,Mn)As/GaSb were studied experimentally to discuss the evidence of hole transfer from p-(In,Mn)As to adjacent GaSb.

Keywords

Curie Temperature Molecular Beam Epitaxy Perpendicular Magnetic Anisotropy Anomalous Hall Effect RHEED Pattern 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • H. Nose
    • 1
  • S. Sugahara
    • 1
  • H. Munekata
    • 1
  1. 1.Imaging Science and Engineering LaboratoryTokyo Institute of TechnologyYokohamaJapan

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