Extrinsic Electrons and Carrier Accumulation in AlxIn1−xSb/InSb Quantum Wells: Well-Width Dependence
Hall coefficient (R H) and magnetoresistance (MR) effects were studied at room temperature and 77 K for undoped quantum well (QW) structures of InSb sandwiched by Al0.1In0.9Sb alloy grown by molecular beam epitaxy on GaAs substrates. As the result of two-carrier analyses of R H, it was found that the sheet density of the extrinsic electrons at room temperature decreases with the increase of the well width above 100 nm. At 77 K the electrons extended in the QW show the negative longitudinal MR in magnetic fields parallel to the QW, which originates in specular boundary scattering in the classical orbits at the walls of barriers.
KeywordsMolecular Beam Epitaxy Quantum Well GaAs Substrate Hall Coefficient Deep Donor
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