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Extrinsic Electrons and Carrier Accumulation in AlxIn1−xSb/InSb Quantum Wells: Well-Width Dependence

  • A. Fujimoto
  • S. Ishida
  • T. Manago
  • H. Geka
  • A. Okamoto
  • I. Shibasaki
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

Hall coefficient (R H) and magnetoresistance (MR) effects were studied at room temperature and 77 K for undoped quantum well (QW) structures of InSb sandwiched by Al0.1In0.9Sb alloy grown by molecular beam epitaxy on GaAs substrates. As the result of two-carrier analyses of R H, it was found that the sheet density of the extrinsic electrons at room temperature decreases with the increase of the well width above 100 nm. At 77 K the electrons extended in the QW show the negative longitudinal MR in magnetic fields parallel to the QW, which originates in specular boundary scattering in the classical orbits at the walls of barriers.

Keywords

Molecular Beam Epitaxy Quantum Well GaAs Substrate Hall Coefficient Deep Donor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • A. Fujimoto
    • 1
  • S. Ishida
    • 2
  • T. Manago
    • 2
  • H. Geka
    • 3
  • A. Okamoto
    • 3
  • I. Shibasaki
    • 3
  1. 1.Nanomaterials Microdevices Research CenterOsaka Institute of TechnologyOsakaJapan
  2. 2.Tokyo University of ScienceYamaguchiJapan
  3. 3.Asahi Kasei CorporationShizuokaJapan

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