Abstract
Hall coefficient (R H) and magnetoresistance (MR) effects were studied at room temperature and 77 K for undoped quantum well (QW) structures of InSb sandwiched by Al0.1In0.9Sb alloy grown by molecular beam epitaxy on GaAs substrates. As the result of two-carrier analyses of R H, it was found that the sheet density of the extrinsic electrons at room temperature decreases with the increase of the well width above 100 nm. At 77 K the electrons extended in the QW show the negative longitudinal MR in magnetic fields parallel to the QW, which originates in specular boundary scattering in the classical orbits at the walls of barriers.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Liu, W. K., Zhang, X., Ma, W., Winesett, J., Santos, M. B.: J. Vac. Sci. Technol. B, 14, 2339–2342, 1996
Ishida, S., Fujimoto, A., Araki, M., Oto, K., Okamoto, A., Shibasaki, I.,: J. of Crystal Growth, 301–302, 199–202, 2007
For a brief review, see Beenakker, C. W. J., and van Houten, H.: ‘Quantum Transport in Semiconductor Nanostructures’, Solid State Physics 44, edited by Ehrenreich, H., and Turnbull, D., Academic Press. 1991
Romanov, F. G., Fokin, A.V., Maude, D.K., Portal J. C.,: Appl. Phys. Lett., 69, 2897–2899, 1996
Geka, H., Okamoto, A., Yamada, S., Goto, H., Yoshida, K., and Shibasaki, I.: J. Crystal Growth, 301–302, 152–157, 2007
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2008 Springer Science+Business Media B.V
About this paper
Cite this paper
Fujimoto, A., Ishida, S., Manago, T., Geka, H., Okamoto, A., Shibasaki, I. (2008). Extrinsic Electrons and Carrier Accumulation in AlxIn1−xSb/InSb Quantum Wells: Well-Width Dependence. In: Murdin, B., Clowes, S. (eds) Narrow Gap Semiconductors 2007. Springer Proceedings in Physics, vol 119. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8425-6_46
Download citation
DOI: https://doi.org/10.1007/978-1-4020-8425-6_46
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-8424-9
Online ISBN: 978-1-4020-8425-6
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)