Control and Probe of Carrier and Spin Relaxations in InSb Based Structures

  • Giti A. Khodaparast
  • R. N. Kini
  • K. Nontapot
  • M. Frazier
  • E. C. Wade
  • J. J. Heremans
  • S. J. Chung
  • N. Goel
  • M. B. Santos
  • T. Wojtowicz
  • X. Liu
  • J. K. Furdyna
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

Narrow gap semiconductors (NGS) offer several scientifically unique features important for the field of spintronics. In order to explore these features we are using standard pump-probe and magneto-optical Kerr effect (MOKE) spectroscopy at different excitation wavelengths, power densities, and temperatures. Our goal is measuring and controlling carrier/spin relaxation in a series of InSb-based quantum wells and films, and InMnSb ferromagnetic films. The dynamic effects observed in these structures demonstrate strong dependence on the photo-induced carrier density.

Keywords

GaAs Sapphire 

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References

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Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • Giti A. Khodaparast
    • 1
  • R. N. Kini
    • 1
  • K. Nontapot
    • 1
  • M. Frazier
    • 1
  • E. C. Wade
    • 1
  • J. J. Heremans
    • 1
  • S. J. Chung
    • 2
  • N. Goel
    • 2
  • M. B. Santos
    • 2
  • T. Wojtowicz
    • 3
  • X. Liu
    • 4
  • J. K. Furdyna
    • 4
  1. 1.Department of PhysicsVirginia Tech.BlacksburgUSA
  2. 2.Homer L. Dodge Department of Physics and AstronomyUniversity of OklahomaNormanUSA
  3. 3.Institute of PhysicsPolish Academy of SciencesWarsawPoland
  4. 4.Department of PhysicsUniversity of Notre DameNotre DameUSA

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