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Control and Probe of Carrier and Spin Relaxations in InSb Based Structures

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Narrow Gap Semiconductors 2007

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 119))

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Abstract

Narrow gap semiconductors (NGS) offer several scientifically unique features important for the field of spintronics. In order to explore these features we are using standard pump-probe and magneto-optical Kerr effect (MOKE) spectroscopy at different excitation wavelengths, power densities, and temperatures. Our goal is measuring and controlling carrier/spin relaxation in a series of InSb-based quantum wells and films, and InMnSb ferromagnetic films. The dynamic effects observed in these structures demonstrate strong dependence on the photo-induced carrier density.

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References

  1. T. Wojtowicz, G. Cywinski, W. L. Lim, X. Liu, M. Dobrowolska, J. K. Furdyna, K. M. Yu, W. Walukiewicz, G. B. Kim, M. Cheon, X. Chen, S. M. Wang, and H. Luo, Appl. Phys. Lett. 82, 4310 (2003)

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Author information

Authors and Affiliations

  1. Department of Physics, Virginia Tech., Blacksburg, VA, 24061, USA

    Giti A. Khodaparast, R. N. Kini, K. Nontapot, M. Frazier, E. C. Wade & J. J. Heremans

  2. Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma, 73019, USA

    S. J. Chung, N. Goel & M. B. Santos

  3. Institute of Physics, Polish Academy of Sciences, 02-668, Warsaw, Poland

    T. Wojtowicz

  4. Department of Physics, University of Notre Dame, Notre Dame, IN, 46556, USA

    X. Liu & J. K. Furdyna

Authors
  1. Giti A. Khodaparast
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  2. R. N. Kini
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  3. K. Nontapot
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  4. M. Frazier
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  5. E. C. Wade
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  6. J. J. Heremans
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  7. S. J. Chung
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  8. N. Goel
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  9. M. B. Santos
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  10. T. Wojtowicz
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  11. X. Liu
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  12. J. K. Furdyna
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Editor information

Editors and Affiliations

  1. Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, GU2 7XH, UK

    Ben Murdin  & Steve Clowes  & 

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Khodaparast, G.A. et al. (2008). Control and Probe of Carrier and Spin Relaxations in InSb Based Structures. In: Murdin, B., Clowes, S. (eds) Narrow Gap Semiconductors 2007. Springer Proceedings in Physics, vol 119. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8425-6_4

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