Abstract
We report in this paper the conception and first characterizations of a Quantum Hot Electron Transistor, an innovative transistor design based on the concept of hot electron transistor and made of InAs/AlSb heterostructures, that has the potential to operate at very high frequency.
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© 2008 Springer Science+Business Media B.V
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Daoud, T., Devenson, J., Baranov, A.N., Teissier, R. (2008). InAs Quantum Hot Electron Transistor. In: Murdin, B., Clowes, S. (eds) Narrow Gap Semiconductors 2007. Springer Proceedings in Physics, vol 119. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8425-6_39
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DOI: https://doi.org/10.1007/978-1-4020-8425-6_39
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-8424-9
Online ISBN: 978-1-4020-8425-6
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