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InAs Quantum Hot Electron Transistor

  • T. Daoud
  • J. Devenson
  • A. N. Baranov
  • R. Teissier
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

We report in this paper the conception and first characterizations of a Quantum Hot Electron Transistor, an innovative transistor design based on the concept of hot electron transistor and made of InAs/AlSb heterostructures, that has the potential to operate at very high frequency.

Keywords

Doping Level Quantum Well Heterojunction Bipolar Transistor Short Period Superlattices Test Diode 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    W. Hafez, W. Snodgrass, and M. Feng, ‘12.5 nm base pseudomorphic heterojunction bipolar transistors achieving Ft=710 GHz and Fmax=340 GHz’, Appl. Phys. Lett. 87, 252109, (2005)CrossRefADSGoogle Scholar
  2. 2.
    A. F. J. Levi, T.H. Chiu, ‘Room temperature operation of hot electron transistors’, Appl. Phys. Lett. 51, 984, (1987)CrossRefADSGoogle Scholar

Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • T. Daoud
    • 1
  • J. Devenson
    • 1
  • A. N. Baranov
    • 1
  • R. Teissier
    • 1
  1. 1.Institut d’Électronique du SudUniversité Montpellier 2 / CNRSMontpellierFrance

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