Electroluminescence From InSb-Based Mid-Infrared Quantum Well Lasers
AlxGayIn1−x−ySb heterostructures suitable for laser applications have been grown on GaAs substrates. The structures have been analysed using X-ray diffraction and photoluminescence. Laser diodes have been fabricated by wet etching 20μm wide bars and cleaving into either 1mm or 2mm lengths. The electroluminescence of these bars has been investigated over a range of temperatures.
KeywordsGaAs Substrate Threshold Current Density Corneal Dystrophy Increase Production Efficiency Lower Threshold Current Density
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