Electroluminescence From Electrically Pumped GaSb-Based VCSELs
A structure for a GaSb-VCSEL device using a buried tunnel-junction (BTJ) and a hybrid dielectric/gold DBR mirror is investigated. The BTJ approach combines several advantages such as reduced intravalence-band absorption, low ohmic losses and an efficient thermal management of the laser diode, which are crucial for room-temperature operation of the device. First results have shown resonant electroluminescence, but due to a misaligned cavity no laser operation was achieved.
KeywordsResistive Contact Laser Operation Ohmic Loss GaSb Substrate Resonant Feature
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