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Electroluminescence From Electrically Pumped GaSb-Based VCSELs

  • O. Dier
  • C. Lauer
  • A. Bachmann
  • T. Lim
  • K. Kashani
  • M. -C. Amann
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

A structure for a GaSb-VCSEL device using a buried tunnel-junction (BTJ) and a hybrid dielectric/gold DBR mirror is investigated. The BTJ approach combines several advantages such as reduced intravalence-band absorption, low ohmic losses and an efficient thermal management of the laser diode, which are crucial for room-temperature operation of the device. First results have shown resonant electroluminescence, but due to a misaligned cavity no laser operation was achieved.

Keywords

Resistive Contact Laser Operation Ohmic Loss GaSb Substrate Resonant Feature 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    Ortsiefer, M. et al.: Electron. Lett. 42 640–641 (2006)CrossRefGoogle Scholar
  2. 2.
    Schulz, N. et al.: phys. stat. sol. ( c ) 3 386–390 (2006)CrossRefMathSciNetGoogle Scholar
  3. 3.
    Cerutti, L. et al.: Electron. Lett. 40 869–870 (2004)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • O. Dier
    • 1
  • C. Lauer
    • 1
  • A. Bachmann
    • 1
  • T. Lim
    • 1
  • K. Kashani
    • 1
  • M. -C. Amann
    • 1
  1. 1.Walter Schottky InstitutTechnische Universität MünchenGermany

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