Performance Evaluation of Conventional Sb-based Multiquantum Well Lasers operating above 3μm at Room Temperature
We present the results of a theoretical performance evaluation of conventional type I Sb-based Quinary Multiple Quantum Well Lasers operating in cw at λ>3μm at Room Temperature. In this purpose, we use a k.P band structure model to calculate the optical properties of these new Quinary Sb-based heterostructures. Our calculations show that for optimized laser structures emitting near 3.3μm, modal gain value GmodalM =50cm−1 and threshold current densities Jth = 2–3 kA/cm2 are expected. Thanks to the valence band offset enhancement, hole lifetime are shown to increase by one order of magnitude in Quinary laser with respect to Quaternary counterpart. Our results show that this kind of Quinary Sb-based type I laser structures are quite convenient for cw RT Laser operation at λ>3μm.
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- 2.K. Zitouni, A. Kadri, P. Christol, A. Joullié, Effects of strain and nonparabolicity on optical gain & threshold current in MIR InxGa1−xAsySb1−y/Al0.35Ga0.65As0.03Sb0.97 Quantum Well Lasers, in proc. of NGS12 (Toulouse, France, July 2005), edited by J. Kono and J. Leotin, pages 343–348 (2005). Google Scholar