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InSb/InAs Nanostructures Grown by Molecular Beam Epitaxy Using Sb2 and As2 Fluxes

  • V. A. Solov’ev
  • P. Carrington
  • Q. Zhuang
  • K. T. Lai
  • S. K. Haywood
  • S. V. Ivanov
  • A. Krier
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

We report the molecular beam epitaxial growth of InSb sub-monolayers inserted in an InAs matrix using Sb2 and As2 fluxes. The InSb/InAs nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (TGr = 450–320°C) which gives rise to the variation of the emission wavelength within the 3.6–4.0μm range at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb2, As2) and (Sb4, As4) is also presented.

Keywords

Molecular Beam Epitaxy Threshold Current Density Molecular Beam Epitaxial Growth Double Heterostructure Laser Pendellosung Fringe 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    Lublinskaya O. G., Solov’ev V. A., Semenov A.N. et al., J. Appl. Phys., 99, 093517, 2006CrossRefADSGoogle Scholar
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    Solov’ev V.A., Lublinskaya O.G., Semenov A.N. et al., Appl. Phys. Lett., 86, 0111091, 2005Google Scholar
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    Sorokin S.V., Sedova I.V., Semenov A.N. et al., Proc 14th Int. Symp. “Nanostructures: Physics and Technology”, St. Petersburg, Russia, 115, 2006Google Scholar

Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • V. A. Solov’ev
    • 1
    • 2
  • P. Carrington
    • 1
  • Q. Zhuang
    • 1
  • K. T. Lai
    • 3
  • S. K. Haywood
    • 3
  • S. V. Ivanov
    • 2
  • A. Krier
    • 1
  1. 1.Physics DepartmentLancaster UniversityLancasterUK
  2. 2.Ioffe Physico-Technical InstituteSt. PetersburgRussia
  3. 3.Electrical Engineering DepartmentUniversity of HullHullUK

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